Solitron Devices 2N5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N5912	Solitron Devices	Dual Matched N-Channel JFET LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL DESCRIPTION The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The
2	2N5535	Solitron Devices	NPN Silicon Power Transistor
3	2N5116	Solitron Devices	P-CHANNEL JFETS JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/476F LOW ON RESISTANCE SWITCHES DIRECTLY FROM TTL LOGIC OR CMOS HIGH OFF ISOLATION S LEVEL EQUIVALENT SCREENING OPTIONS LIGHT WEIGHT SECOND SOURCE FOR MICROSEMI Ideal for inverting switch
4	2N5911	Solitron Devices	Dual Matched N-Channel JFET LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL DESCRIPTION The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The
5	2N5538	Solitron Devices	NPN Silicon Power Transistor
6	2N5115	Solitron Devices	P-CHANNEL JFETS JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/476F LOW ON RESISTANCE SWITCHES DIRECTLY FROM TTL LOGIC OR CMOS HIGH OFF ISOLATION S LEVEL EQUIVALENT SCREENING OPTIONS LIGHT WEIGHT SECOND SOURCE FOR MICROSEMI Ideal for inverting switch
7	2N5114	Solitron Devices	P-CHANNEL JFETS JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/476F LOW ON RESISTANCE SWITCHES DIRECTLY FROM TTL LOGIC OR CMOS HIGH OFF ISOLATION S LEVEL EQUIVALENT SCREENING OPTIONS LIGHT WEIGHT SECOND SOURCE FOR MICROSEMI Ideal for inverting switch
8	2N5536	Solitron Devices	NPN Silicon Power Transistor
9	2N5537	Solitron Devices	NPN Silicon Power Transistor