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2N5912 |
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| Part Number | 2N5912 |
| Manufacturer | Solitron Devices |
| Description | The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TX, TXV, and S-Level Screening Available - Consult Factory. Source . |
| Features | LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL DESCRIPTION The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TX, TXV, and S-Level Screening Available - Consult Factory. Source Case 5 6 Drain Gate 3 Drain 2 1 Source 7 Gate Bottom View ORDERING GUIDE Part Number 2N5911, 2N5912 Description -25V Dual Match. |
| Datasheet |
 2N5912 Data Sheet
PDF 105.94KB |
| Distributor | Stock | Price | Buy |
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2N5912 |
| Part Number | 2N5912 |
| Manufacturer | Micross |
| Title | N-CHANNEL JFET |
| Description | 2N5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 The 2N5912 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These device. |
| Features | Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE (10KHz) en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to D. |
2N5912 |
| Part Number | 2N5912 |
| Manufacturer | Siliconix |
| Title | dual n-channel JFET |
| Description | matched dual -- •n-channel JFETs designed for • • • 0- 1ft Wideband Differential Z Amplifiers ~ ABSOLUTE MAXIMUM RATINGS (25°C) Gate·to·Gate Voltage ... ±80V Gate·Drain or Gate·Source Voltage ...•... -25 V Gate Current ... 50 rnA Device . |
| Features |
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en
NF
Characteristic
Gate Reverse Current
Gate ·Source Breakdown Voltage Gate ·Source Cutoff Voltage Gate ·Source Voltage Gate Operating Current Saturation Drain Current (Note 1) Common~Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common~Source Output Conductance Common-Suurct! input Capacitance Common-Source Reverse Transfer Capacitance E. |
2N5912 |
| Part Number | 2N5912 |
| Manufacturer | Calogic LLC |
| Title | Dual N-Channel JFET |
| Description | Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50m. |
| Features | ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . .. |
2N5912 |
| Part Number | 2N5912 |
| Manufacturer | National Semiconductor |
| Title | N-Channel Monolithic Dual JFET |
| Description | The 2N5911 thru2N5912 series of N-channel monolithic dual JFETs is designed for wideband, low noise differen- tial amplifiers. TO-78 Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±25V Gate-Drain or Gate-Source Voltage Gate Current -25V 50 mA Device Dissipation {Each Side), (Derate 3 mW/. |
| Features | ductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance VGS = -15V, V DS =0 lG = - 1uA, V DS =0 VDS = 10V, Iq = 1 nA 150 C vdg = 10V, Dl = 5 mA 12SX vds = 10V, V G s = 0V, (Note 1) f = 1 kHz f = 100 MHz f = 1 kHz f = 100 MHz vdg = 10V, Iq = 5 mA f = 1 MHz en Equivalent Short-Circuit Input Noise Voltage f = 10 kHz NF Spot N. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N591 |
ETC |
PNP Transistor |
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| 2 | 2N5910 |
Central Semiconductor Corp |
PMP SILICON SWITCHING TRANSISTORS |
|
| 3 | 2N5911 |
Calogic LLC |
Dual N-Channel JFET |
|
| 4 | 2N5911 |
Micross |
N-CHANNEL JFET |
|
| 5 | 2N5911 |
Siliconix |
dual n-channel JFET |
|
| 6 | 2N5911 |
Solitron Devices |
Dual Matched N-Channel JFET |
|
| 7 | 2N5911 |
National Semiconductor |
N-Channel Monolithic Dual JFET |
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| 8 | 2N5912C |
Micross |
N-CHANNEL JFET |
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| 9 | 2N5914 |
RCA Solid State |
RF POWER TRANSISTOR |
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| 10 | 2N5915 |
RCA Solid State |
RF POWER TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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