Siliconix ND2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	ND2410B	Siliconix	N-Channel Depletion-Mode MOS Transistors nce case for all temperature testing 6-46 ND2410L 156 ND2410B 125 UNITS DC/W ~Siliconix ..LII inccrpcrated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(BR)OSV
2	ND2406B	Siliconix	N-Channel Depletion-Mode MOS Transistors erence case for all temperature testing 6-44 ND2406L 156 ND2406B 125 UNITS DC/W .rSiliconix .LJII incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(B
3	ND2406L	Siliconix	N-Channel Depletion-Mode MOS Transistors erence case for all temperature testing 6-44 ND2406L 156 ND2406B 125 UNITS DC/W .rSiliconix .LJII incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(B
4	ND2020E	Siliconix	N-Channel Depletion-Mode MOS Transistors perature 2Reference case for all temperature testing 6-42 ND2020L 156 ND2020E 400 UNITS DC/W ~ ttCriSnciolripcooranteri:x:l ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage
5	ND2020L	Siliconix	N-Channel Depletion-Mode MOS Transistors perature 2Reference case for all temperature testing 6-42 ND2020L 156 ND2020E 400 UNITS DC/W ~ ttCriSnciolripcooranteri:x:l ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage
6	ND2012E	Siliconix	N-Channel Depletion-Mode MOS Transistors m junction temperature 2Reference case for all temperature testing 6-40 ND2012L 156 ND2012E 400 UNITS °C/W ..LrI-ISiinlciocrpoonratiexd ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate
7	ND2012L	Siliconix	N-Channel Depletion-Mode MOS Transistors m junction temperature 2Reference case for all temperature testing 6-40 ND2012L 156 ND2012E 400 UNITS °C/W ..LrI-ISiinlciocrpoonratiexd ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate
8	ND2410L	Siliconix	N-Channel Depletion-Mode MOS Transistors nce case for all temperature testing 6-46 ND2410L 156 ND2410B 125 UNITS DC/W ~Siliconix ..LII inccrpcrated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(BR)OSV