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ND2012L |
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| Part Number | ND2012L |
| Manufacturer | Siliconix |
| Description | ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.16 TO-92 ND2012E 200 12 0.22 TO-206AC tcrSilico... |
| Features |
m junction temperature 2Reference case for all temperature testing
6-40
ND2012L 156
ND2012E 400
UNITS °C/W
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ELECTRICAL CHARACTERISTICS 1
PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage
SYMBOL
V(BR)OSV VGS(OFF)
IGSS
Drain Cutoff Current Drain Saturation Current 3 Drain-Source On-Resistance 3
10(OFF) loss
rOS(ON)
Forward Transconductance Common Source Output Conductance 3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING
Turn-On Time
gFs gos
CISS
Coss erss
td(ON) tr
Turn-Off Tim... |
| Document |
 ND2012L Data Sheet
PDF 96.56KB |
Similar Datasheet
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| 2 | ND2012L |
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Desde 2024. D4U Semiconductor.
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