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Vishay Siliconix |
P-Channel MOSFET www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990—Rev. E, 13-Oct-03 www.vishay.com RthJA Symbol Limit 100 166 Unit _C/W 1 Si2301DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 9.5 dB min. at 2 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System L G H J F I K M NP DIM A MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1- |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested TO-236 (SOT-23) G1 S2 3D Top View Si2308DS (A8)* * Marking Code Ordering Information: Si2308DS-T1 Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Le |
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Vishay Siliconix |
N-Channel MOSFET D 1.8-V Rated D RoHS Compliant Top View Si2312DS (C2)* *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1—E3 (Lead (Pb)-Free) Pb-free Available ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady |
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Vishay Siliconix |
P-Channel MOSFET • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Marking code: E7 1 G Top View 2 S S G Available PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at V |
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Silicon Laboratories |
V.92 ISOMODEM This data sheet applies to Si2493 Revision D Data modem formats ITU-T, Bell 300 bps up to 56 kbps V.21,V.22, V.29 Fast Connect V.44, V.42, V.42bis, MNP2-5 Automatic rate negotiation V.92 PCM upstream V.92 Quick connect V.92 Modem |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 10 dB min. at 1.0 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 10 dB min. at 3 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System L G H J F I K P MN DIM A MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 10 dB min. at 5W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM G L H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O A B C D E F G H .028 / 0.71 .740 / 18.80 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 9.5 dB min. at 4 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 9.5 dB min. at 7 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / |
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Vishay Siliconix |
P-Channel MOSFET el information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72066 S-31990—Rev. B, 13-Oct-03 www.vishay.com RthJA Symbol Typical 120 140 Maximum 145 175 Unit _C/W 1 Si2301BDS Vishay Siliconix SPECIFICATIONS |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC G1 S2 3D Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1-E3 (Lead (Pb)-free) Si2 |
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Vishay Siliconix |
N-Channel MOSFET ID (A) 3.5 2.8 rDS(on) (W) 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • PA Switch TO-236 (SOT-23) G1 S2 3D Top View Si2323DS (D3)* * Marking Code Ordering Information: Si2323DS-T1 Si2323DS-T1-E3 (Lead (Pb)-free |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free Option Available • TrenchFET® Power MOSFETS APPLICATIONS • Load Switch • PA Switch Top View Si2331DS *(E1) * Marking Code Ordering Information: Si2331DS-T1-E3 (Lead (Pb)-free) Si2331DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUT |
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Silicon Systems |
LOW POWER DTMF RECEIVER |
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Silicon Laboratories |
RF SYNTHESIZER WITH INTEGRATED VCOS INTEGRATED VCOS ! Dual-band RF synthesizers " " ! ! ! ! ! ! RF1: 2300 to 2500 MHz RF2: 2025 to 2300 MHz 62.5 to 1000 MHz ! ! IF synthesizer " Integrated VCOs, loop filters, varactors, and resonators Minimal external components required Low phase noise 5 µA st |
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Vishay Siliconix |
P-Channel MOSFET ID (A) - 4.1 - 3.4 - 2.0 7.8 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = - 4.5 V -8 0.060 at VGS = - 2.5 V 0.088 at VGS = - 1.8 V • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT APPL |
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Desde 2024. D4U Semiconductor.
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