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Silan Microelectronics Joint-s DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
SD6109

Silan Microelectronics Joint-stock
VOLTAGE MODE PWM POWER SUPPLY
* Advanced Bi-CMOS process. *4KV HBM ESD protection * Bipolar structure adopted in Shunt regulators TL431, with high reliability * Over voltage protection for 3.3V/5V/12V * Under voltage protection for 3.3V/±5V/±12V * Over power protection * Short ci
Datasheet
2
2SB166100MA

Silan Microelectronics Joint-stock
LOW IR SCHOTTKY BARRIER DIODE CHIPS
rs Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 5 150 150 -40~150 Unit V A A °C °
Datasheet
3
SD16729

Silan Microelectronics Joint-stock
16-BIT CONSTANT CURRENT LED DRIVER
* Output current adjustable through external resistor * Data serial-in/serial-out * 16-channel constant current output * Output current: 1~45mA * 30MHz clock frequency * Fast output current response, ENABLE min. width:30ns * Current Precision (all ou
Datasheet
4
SD16730

Silan Microelectronics Joint-stock
8-Bit Constant Current LED Driver
* Output current adjustable through an external resistor * Serial data in/out * 8 constant-current output channels * Output current: 2-80mA * 20MHz clock frequency * Current accuracy (All output ON) Current accuracy Between Bits <±3% Between ICs <±6%
Datasheet
5
2SB166040ML

Silan Microelectronics Joint-stock
SCHOTTKY BARRIER DIODE CHIPS
erse Current Symbol VBR VF IR Test Conditions IR=0.5mA IF=5A VR=60V Min. 60 --Max. -0.70 0.5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 La fabricated in silicon epitaxial planar tech
Datasheet



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