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2SB166100MA |
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| Part Number | 2SB166100MA |
| Manufacturer | Silan Microelectronics Joint-stock |
| Description | Ø Ø 2SB166100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C ope... |
| Features |
rs Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 5 150 150 -40~150 Unit V A A °C °C
ELECTRICAL CHARACTERISTICS (Tamb=25 )
Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.5mA IF=5A VR=100V Min. 100 --Max. -0.85 0.5 Unit V V mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.04.27 Page 1 of 1
La
fabricated in silicon epitaxial planar technology;
... |
| Document |
 2SB166100MA Data Sheet
PDF 41.00KB |
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