| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = |
|
|
|
|
Siemens Semiconductor Group |
Quad Driver Incl. Short-Circuit Signaling q q q Short-circuit shutdown with clock generator Four driver circuits for controlling power transistors Overload and short-circuit signaling P-DIP-18-1 Type FZL 4145 D General Description Ordering Code Q67000-H8437 Package P-DIP-18-1 The IC co |
|
|
|
|
Siemens Semiconductor Group |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) C characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf Ls Ω nH IF = 5 mA, f = 100 MHz Series inductance Configuration of the shunt-diode - A perfect ground is essential for o |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 0.8 1.1 2.9 0.052 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VC |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ drive circuit) akdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 1.61 60 mV 0.3 V 0.6 1.5 2.2 6.2 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) Vi(on) 1 VEB = 10 V, IC = 0 DC current gain IC = |
|
|
|
|
Siemens Semiconductor Group |
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection) • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping |
|
|
|
|
Siemens Semiconductor Group |
Smart Lowside Power Switch • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Continuous drain source voltage On-state resistance Current |
|
|
|
|
Siemens Semiconductor Group |
PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) eakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 227 70 V 0.3 1.2 2.5 29 0.52 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.5 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = |
|
|
|
|
Siemens Semiconductor Group |
PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) kdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.75 70 V 0.3 1.5 2.5 13 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.6 VEB = 10 V, IC = 0 DC current gain IC = 50 mA, VCE = |
|
|
|
|
Siemens Semiconductor Group |
Smart Highside Power Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open dra |
|
|
|
|
Siemens Semiconductor Group |
ISDN DC Converter Circuit IDCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) ase breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 155 70 V 0.3 0.8 1.4 6.2 0.11 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit) tage Values typ. max. Unit V(BR)CEO 50 10 0.21 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 167 70 V 0.3 1 1.4 13 0.24 kΩ - VCB = 40 V, IE = 0 Emitter cutoff c |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) own voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Co |
|
|
|
|
Siemens Semiconductor Group |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) fect ground is essential for optimum isolation - The anode pins should be used as passage for RF Package Semiconductor Group 3 Feb-26-1996 |
|
|
|
|
Siemens Semiconductor Group |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) C characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf Ls Ω nH IF = 5 mA, f = 100 MHz Series inductance Configuration of the shunt-diode - A perfect ground is essential for o |
|
|
|
|
Siemens Semiconductor Group |
Miniature Printed Circuit Board Relays/ Sockets and Accessories • SPST through DPDT contact arrangements. • Immersion cleanable and flux tight versions available. • VDE 10mm spacing, 5kV dielectric, coil to contacts. • UL Class F coil insulation system. • Conforms to UL 508, 1873, 353 and 1950. • Low profile; 15. |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit) eakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) ge V(BR)CBO 50 IC = 10 µA, IB = 0 Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO 100 nA 120 630 V 0.3 0.8 1.1 6.2 kΩ VCB = 40 V, IE = 0 DC current gain hFE VCEsat Vi(off) 0.4 IC = 5 mA, VCE = 5 V C |
|
|
|
|
Siemens Semiconductor Group |
PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) akdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 167 70 V 0.3 1 1.4 13 0.24 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.5 VEB = 6 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V |
|
Desde 2024. D4U Semiconductor.
|