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BCR135S |
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| Part Number | BCR135S |
| Manufacturer | Siemens Semiconductor Group |
| Description | BCR 135S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R... |
| Features |
tage Values typ. max. Unit
V(BR)CEO
50 10 0.21 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 167 70 V 0.3 1 1.4 13 0.24 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.5
VEB = 6 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.5
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
R1 R1/R2
7 0.19
AC Characteristics Transition frequency
fT
150 ... |
| Document |
 BCR135S Data Sheet
PDF 43.80KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BCR135 |
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Desde 2024. D4U Semiconductor.
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