| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors nless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A Collector-base breakdown voltage IC = 10 µA, IB = 0 PZT 2222 PZT 2222 A Emitter-base breakdown voltage IE = |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistor C = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 Collector-emitter cutoff current VCE = 30 V, + VBE = 0.5 V Collector-base cutoff c |
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Siemens Semiconductor Group |
NPN Silicon High-Voltage Transistors pecified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 PZTA 42 PZTA 43 Collector-base breakdown voltage IC = 100 µA, IB = 0 PZTA 42 PZTA 43 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistors |
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Siemens Semiconductor Group |
PNP Silicon Darlington Transistors ics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-b |
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Siemens Semiconductor Group |
PNP Silicon High-Voltage Transistors pecified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 PZTA 92 PZTA 93 Collector-base breakdown voltage IC = 100 µA, IB = 0 PZTA 92 PZTA 93 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistor C = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 Collector-emitter cutoff current VCE = 30 V, – VBE = 0.5 V Base-emitter cutoff cur |
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Siemens Semiconductor Group |
NPN Silicon Darlington Transistors cs at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-ba |
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Siemens Semiconductor Group |
PNP Silicon Darlington Transistors ics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-b |
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Desde 2024. D4U Semiconductor.
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