PZTA13 |
Part Number | PZTA13 |
Manufacturer | Siemens Semiconductor Group |
Description | NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications q High collector current q High current gain q Complementary types: PZTA 63 PZTA 64 (PNP) q Type PZTA 13 PZTA 14 Mark... |
Features |
cs at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V PZTA 13 PZTA 14 PZTA 13 PZTA 14 VCEsat VBEsat V(BR)CES V(BR)CB0 V(BR)EB0 ICB0 – – IEB0 hFE 5000 10000 10000 20000 – – – – – – – – – – – – 1.5 2.0 V – – – – 100 10 100 nA µA ... |
Document |
PZTA13 Data Sheet
PDF 139.21KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PZTA13 |
Fairchild Semiconductor |
NPN Darlington Transistor | |
2 | PZTA13 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors | |
3 | PZTA14 |
SeCoS |
NPN Transistor | |
4 | PZTA14 |
JCET |
NPN Transistor | |
5 | PZTA14 |
WEITRON |
Darlington NPN Silicon Planar Epitaxial Transistor | |
6 | PZTA14 |
NXP |
NPN Darlington transistor |