| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Signal Processing Subscriber Line Interface Codec Filter SLICOF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Pin Definition and Functions . . . . . . |
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Siemens Semiconductor Group |
Silicon Switching Diodes (High-speed/ high-voltage switch) IR – – – – 100 100 nA µA – – 1 1.25 120 200 250 – – – – – – V Values typ. max. Unit Forward voltage IF = 100 mA IF = 200 mA Reverse current VR = VR max VR = VR max; Tj = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recove |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units q High capacitance ratio q Type BB 833 Ordering Code (tape and reel) Q62702-B628 Pin Configuration 1 2 C A Marking white X Package SOD-323 Maximum Ratings Par |
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Siemens Semiconductor Group |
Quadruple Transceiver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 1.2 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 1.3 Pin Configuration |
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Siemens Semiconductor Group |
Silicon Photodiode for the visible spectral range q Especially suitable for applications from 350 nm to 820 nm q Adapted to human eye sensitivity (Vλ) q Hermetically sealed metal package (similar to TO-5) Applications q Exposure meter for daylight q For artificial light of high color temperature in |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) . Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2 Unit V(BR) IR VF 50 - V µA mV I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 1.2 |
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Siemens Semiconductor Group |
TOPLED RG Super-Bright/ Hyper-Red GaAIAs-LED q q q q q q q q color of package: white double heterojunction in GaAIAs technology superior luminous intensity for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering me |
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Siemens Semiconductor Group |
Silicon Switching Diode (For high-speed switching) characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA CD trr – – – – 1.5 6 pF ns V(BR) VF – – – – IR – – – – – – 2.5 30 50 – – – – 715 855 1 1.25 mV mV V V µA Values typ. |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) cified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resista |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) lumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 17W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. ma |
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Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) meter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -20-1998 BBY 53-02W Diode capacitance CT = f (V R) f = 1MHz 6 |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998- |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V) T Values typ. – – 470 – – 1.4 480 500 – max. Unit nA 20 200 pF 520 34 – – – – 3 – Ω – ppm/K % 15 – – – – CT Semiconductor Group 2 BB 512 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) T |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) citance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance) 00 nA CT 62 2.65 76 3.1 pF CT1/CT28 22 ∆CT/CT – 2.5 – – % Ω – – – nH – rS Ls Package Outline SOD-323 Dimensions in mm Semiconductor Group 2 BB 641 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 0.25 0.09 0.6 19.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) .3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistanc |
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Siemens Semiconductor Group |
HIGH SPEED OPTOCOUPLER • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 2500 VRMS • Very High Common Mode Transient Immunity: 15000 V/µ s at VCM=1500 V Guaranteed (SFH634 |
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Desde 2024. D4U Semiconductor.
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