BAR63 |
Part Number | BAR63 |
Manufacturer | Siemens Semiconductor Group |
Description | BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06... |
Features |
cified.
Parameter
Symbol min.
Value typ. max.
Unit
DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Forward current IF = f (TA*TS)
BAR63
V(BR)
50 0.95 0.3 0.21 1.2 1 75 1.4 -
V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH
IR VF CT CT rf
τs
Ls
Forward current IF = f (TA*TS)
per each Diode BAR63-04,-05,-06
mA
mA
TS IF TA
TS IF ... |
Document |
BAR63 Data Sheet
PDF 80.64KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BAR60 |
Siemens Semiconductor Group |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) | |
2 | BAR61 |
Siemens Semiconductor Group |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) | |
3 | BAR61 |
Infineon Technologies AG |
Silicon PIN Diode | |
4 | BAR63 |
Infineon Technologies AG |
Silicon PIN Diodes | |
5 | BAR63-02L |
Infineon Technologies AG |
Silicon PIN Diodes | |
6 | BAR63-02V |
Infineon Technologies AG |
Silicon PIN Diodes |