Siemens Semiconductor Group CG Hoja de datos

No.	parte #	Fabricante	Descripción
1	CGY0819	Siemens Semiconductor Group	GaAs MMIC s 1 / Fo CGY 0819 Functional Block Diagram: Pin Configuration: Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name VD Cell RF IN Cell Vneg Vcon cell Vcon PCS Vneg RF IN PCS VD PCS RF out PCS RF out PCS RF out PCS RF out PCS GND RF out Cell RF out Ce
2	CGY184	Siemens Semiconductor Group	GaAs MMIC ock diagram Vc on (2 ) VD1(4) VD2(7) VD3(8) Vneg(15) control circuit Pout/VD4 (9,10,11 Pin(3) GND1(5) GND2(6) GND3(17) Pin # 1 2 3 4 5 6 7 8 9,10,11 12 13 14 15 16 (17) n. c. Vcon PIN VD1 Gnd1 Gnd2 VD2 VD3 POUT/VD4 n. c. n. c. n. c. Vneg n. c.
3	CGY196	Siemens Semiconductor Group	GaAs MMIC CGY 196 Functional Block Diagram VD1 VD2 RFin/Vg RFout/Vd3 G ND G ND G ND Pin # 1 2 3 4 5 6 7 8 Name Configuration RF input power + Gate voltage [0V internal] RF and DC ground Pos. drain voltage of the 2nd stage not connected not connecte
4	CGY40	Siemens Semiconductor Group	GaAs MMIC DG PIN TCh Tstg Ptot RthChS 155 K/W Note: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or curren
5	CGY62	Siemens Semiconductor Group	GaAs MMIC 0.7 mm Siemens Aktiengesellschaft pg. 1/5 15.01.96 HL EH PD 21 GaAs MMIC Electrical characteristics CGY 62 ________________________________________________________________________________________________________ TA = 25°C VD = 4,5 V RS = RL
6	CGY94	Siemens Semiconductor Group	GaAs MMIC entical to SOT 223, dimensions see chapter Package Outlines 2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR ≠ 0V Siemens Aktiengesellschaft pg. 1/9 17.10.95 HL EH PD 21 GaAs MMIC CGY 94 ________________________________________
7	CGY0918	Siemens Semiconductor Group	GaAs MMIC 1 2 3 4 5,6,7,8 9 10 11 12 13 14 15,16 (17) Name P_IN P_GND1 P_VD1 P_VD2 P_OUT G_IN Configuration RF input PCN Ground 1st stage PCN Drain 1st stage PCN Drain 2nd stage RF output PCN and drain 3rd stage RF input GSM G_Control Power control GSM P_Co
8	CGY121	Siemens Semiconductor Group	GaAs MMIC n-out changed compared to CGY120: 180° rotation Siemens Aktiengesellschaft 1 Semiconductor Group 1 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2
9	CGY121	Siemens Semiconductor Group	GaAs MMIC n-out changed compared to CGY120: 180° rotation Siemens Aktiengesellschaft 1 Semiconductor Group 1 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2
10	CGY121A	Siemens Semiconductor Group	GaAs MMIC n-out changed compared to CGY120: 180° rotation Siemens Aktiengesellschaft 1 Semiconductor Group 1 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2
11	CGY121B	Siemens Semiconductor Group	GaAs MMIC 0: 180° rotation Siemens Aktiengesellschaft 1 Semiconductor Group 1 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2, 5) Pin # 1 2 3 4 5 6 VD2 /
12	CGY180	Siemens Semiconductor Group	GaAs MMIC er Package Outlines 2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR ≠ 0V Siemens Aktiengesellschaft pg. 1/15 21.02.96 HL EH PD 21 GaAs MMIC Functional Block Diagram: VG CGY 180 _________________________________________________
13	CGY181	Siemens Semiconductor Group	GaAs MMIC ly in combination with VTR = 0V; VG = -6V while VTR ≠ 0V Siemens Aktiengesellschaft pg. 1/14 01.02.96 HL EH PD 21 GaAs MMIC CGY 181 ________________________________________________________________________________________________________ Functi
14	CGY191	Siemens Semiconductor Group	GaAs MMIC c. n. c. Vcon Vneg n. c. RF IN n. c. VD 1 n. c. n. c. RF out RF out RF out RF out n. c. n. c. RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage Drain voltage p
15	CGY21	Siemens Semiconductor Group	GaAs MMIC ling procedures are required to protect the electrostatic sensitive IC against degradation due to excess voltage or excess current spikes. Excellent ground connection of lead 4 and the package (e. g. soldered on microstripline laminate) is required t
16	CGY31	Siemens Semiconductor Group	GaAs MMIC procedures are required to protect the electrostatic sensitive IC against degradation due to excess voltage or excess current spikes. Excellent ground connection of lead 4 and the package (e. g. soldered on microstripline laminate) is required to ach
17	CGY50	Siemens Semiconductor Group	GaAs MMIC <170 K/W Note: exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess current spikes. Proper ground connection of l
18	CGY52	Siemens Semiconductor Group	GaAs MMIC llschaft pg. 1/4 12.02.96 HL EH PD 21 GaAs MMIC Electrical characteristics CGY 52 ________________________________________________________________________________________________________ TA = 25°C VD = 4.5 V RS = RL = 50Ω unless otherwise sp
19	CGY59	Siemens Semiconductor Group	GaAs MMIC °C mW VD TCh Tstg Ptot RthChS RthJA < 220 < 300 K/W K/W 1) Dimensions see chapter Package Outlines 2) Please care for sufficient heat dissipation on the pcb! 3) Package mounted on alumina 15mm x16.7 mm x0.7 mm Siemens Aktiengesellschaft pg. 1/
20	CGY60	Siemens Semiconductor Group	GaAs MMIC 220 < 300 K/W K/W 1) Dimensions see chapter Package Outlines 2) Please care for sufficient heat dissipation on the pcb! 3) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm Siemens Aktiengesellschaft pg. 1/7 12.01.96 HL EH PD 21 GaAs MMIC Ele