CGY50 |
Part Number | CGY50 |
Manufacturer | Siemens Semiconductor Group |
Description | GaAs MMIC CGY 50 ________________________________________________________________________________________________________ Datasheet * Single-stage monolithic microwave IC ( MMICamplifier ) * Cascad... |
Features |
<170
K/W
Note: exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess current spikes. Proper ground connection of leads 1 and 3 ( with minimum inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate tuning.
1) Dimensions see chapter Package Outlines 2) See application circuit. 3) TS is measured on the source 1 lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/5 11.01.1996 HL EH PD 21
G... |
Document |
CGY50 Data Sheet
PDF 34.55KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CGY52 |
Siemens Semiconductor Group |
GaAs MMIC | |
2 | CGY59 |
Siemens Semiconductor Group |
GaAs MMIC | |
3 | CGY0819 |
Siemens Semiconductor Group |
GaAs MMIC | |
4 | CGY0918 |
Siemens Semiconductor Group |
GaAs MMIC | |
5 | CGY1032 |
NXP Semiconductors |
1 GHz - 32 dB gain GaAs push-pull amplifier | |
6 | CGY1041 |
NXP Semiconductors |
1 GHz - 21 dB gain GaAs push-pull amplifier |