Siemens Semiconductor Group CF Hoja de datos

No.	parte #	Fabricante	Descripción
1	CFY35-23	Siemens Semiconductor Group	GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) l characteristics at TA = 25°C, unless otherwise specified CFY 35 ________________________________________________________________________________________________________ Characteristics Drain-source saturation current V = 2.5 V, DS Symbol min
2	CFY30	Siemens Semiconductor Group	GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) he soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HL EH PD 21 GaAs FET CFY 30 ________________________________________________________________________________________________________ Electrical characteristics at TA
3	CFY35	Siemens Semiconductor Group	GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) l characteristics at TA = 25°C, unless otherwise specified CFY 35 ________________________________________________________________________________________________________ Characteristics Drain-source saturation current V = 2.5 V, DS Symbol min
4	CFY77-08	Siemens Semiconductor Group	AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 C
5	CF739	Siemens Semiconductor Group	GaAs FET (N-channel dual-gate GaAs MES FET) N-channel dual-gate GaAs MES FET q Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners q Low noise q High gain q Low input capacitance q ESD: Electrostatic discharge sensitive device, observe han
6	CF750	Siemens Semiconductor Group	GaAs MMIC (Biased Dual Gate GaAs FET) e chapter Package Outlines 2) TS: Temperature measured at soldering point Siemens Aktiengesellschaft pg. 1/6 12.01.96 HL EH PD 21 GaAs MMIC Electrical characteristics DC characteristics Drain-Source Breakdown Voltage ID = 500 µA, -VGS=4V CF 750 __
7	CFY25	Siemens Semiconductor Group	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS
8	CFY25-17	Siemens Semiconductor Group	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS
9	CFY25-20	Siemens Semiconductor Group	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS
10	CFY25-23	Siemens Semiconductor Group	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS
11	CFY35-20	Siemens Semiconductor Group	GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) l characteristics at TA = 25°C, unless otherwise specified CFY 35 ________________________________________________________________________________________________________ Characteristics Drain-source saturation current V = 2.5 V, DS Symbol min
12	CFY77	Siemens Semiconductor Group	AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 C
13	CFY77-10	Siemens Semiconductor Group	AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 C