Siemens Semiconductor Group BS Hoja de datos

No.	parte #	Fabricante	Descripción
1	PEF3065NV3.2	Siemens Semiconductor Group	Signal Processing Subscriber Line Interface Codec Filter SLICOF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Pin Definition and Functions . . . . . .
2	BSP129	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) b 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown v
3	BSM181R	Siemens Semiconductor Group	IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris
4	BSP75	Siemens Semiconductor Group	Smart Lowside Power Switch • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Continuous drain source voltage On-state resistance Current
5	BSM100GAL120DN2	Siemens Semiconductor Group	IGBT Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.1 2.5
6	BSM121AR	Siemens Semiconductor Group	IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Dr
7	BSM150GT120DN2	Siemens Semiconductor Group	IGBT 150 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 2 8 6.5 3 3.7 V VGE = VCE, IC = 6 mA Collector-
8	BSM15GD120D2	Siemens Semiconductor Group	IGBT eristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7 V VGE = VCE, IC = 0.6 mA Collector-emitter saturation voltage
9	BSM15GD60DN2	Siemens Semiconductor Group	IGBT otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 0.4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj
10	BSM181	Siemens Semiconductor Group	IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris
11	BSP280	Siemens Semiconductor Group	IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)
12	BSP92	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown vo
13	BSS100	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 1.5 0.1 2 1 1 3.5 5 2 1 60 10 10 V VGS = 0 V, ID = 0.25 mA, Tj =
14	BSS145	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor JA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 65 2 0.
15	BSS89	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor aracteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 1.5 0.1 10 10 4.5 5.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold v
16	HYB3116160BSJ	Siemens Semiconductor Group	1M x 16-Bit Dynamic RAM 1k & 4k -Refresh include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161
17	HYB3117800BSJ-50	Siemens Semiconductor Group	2M x 8 - Bit Dynamic RAM 2k Refresh include single + 3.3 V (± 0.3V) power supply, direct interfacing with high-performance logic device families. Ordering Information Type HYB 3117800BSJ-50 HYB 3117800BSJ-60 HYB 3117800BSJ-70 Pin Names A0 to A10 A0 to A9 RAS OE I/O1-I/O8 CAS WE Row Add
18	Q62702-A3461	Siemens Semiconductor Group	Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) apacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF – – ∆VF Values typ. – max. – 4 Unit V 0.43 0.55 – – 5.5 – – 10 0.35 – mV pF Ω – – – CT RF Semiconductor Group 2 BAT 14-099 Forward current IF = f (VF) Fo
19	PEB3065	Siemens Semiconductor Group	Signal Processing Subscriber Line Interface Codec Filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Pin Definition and Functions . . . . . .
20	CFY35-23	Siemens Semiconductor Group	GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) l characteristics at TA = 25°C, unless otherwise specified CFY 35 ________________________________________________________________________________________________________ Characteristics Drain-source saturation current V = 2.5 V, DS Symbol min