Siemens Semiconductor Group BA Hoja de datos

No.	parte #	Fabricante	Descripción
1	BAT15-S	Siemens Semiconductor Group	Silicon Schottky Diode 10 S BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S FSSB – – – – rf BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S – – – – 3.5 4.0 7.0 10.0 – – – – 6.0 6.5 6.5 7.0 – – – – Ω – – – – – – – – 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45 – – – – –
2	BAT32	Siemens Semiconductor Group	Silicon Schottky Diode rd current IF = f (VF)
3	BA586	Siemens Semiconductor Group	Silicon PIN Diode – – 10 – – µS Values typ. – – max. 1.15 50 – – Unit V nA pF 0.23 0.2 0.35 – Ω nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz
4	Q28000-A4668	Siemens Semiconductor Group	NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS
5	BFT12	Siemens Semiconductor Group	NPN SILICON RF BROADBAND TRANSISTOR
6	BA887	Siemens Semiconductor Group	Silicon PIN Diode IF = 10 mA τL Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Package Outline SOT-23 Semiconductor Group 2 BA 887 Diode capacitance CT = f (VR) f = 1 MHz, 100 MHz Forward resistance rt = (IF), f = 100 MHz 3rd Harmonic intercept point
7	BAR63-05W	Siemens Semiconductor Group	Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) . Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2 Unit V(BR) IR VF 50 - V µA mV I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 1.2
8	BAS28W	Siemens Semiconductor Group	Silicon Switching Diode Array F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 1 µA IR IR - VR = 75 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C AC characteristics Diode capacitance - - 30 50 CD trr - - 2 6 pF ns VR = 0
9	BAT14	Siemens Semiconductor Group	HiRel Silicon Schottky Diode ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device, observe h
10	BAT15-04	Siemens Semiconductor Group	Silicon Schottky Diode tance VR = 0 V, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Package Outline SOT-23 Semiconductor Group 2 BAT 15-04 Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3
11	BAT15-124	Siemens Semiconductor Group	Silicon Schottky Diode ltage IF = 1 mA BAT 15-014 BAT 15-044 BAT 15-074 BAT 15-104 BAT 15-124 IF = 10 mA BAT 15-014 BAT 15-044 BAT 15-074 BAT 15-104 BAT 15-124 Diode capacitance f = 1 MHz, VR = 0 BAT 15-014 BAT 15-044 BAT 15-074 BAT 15-104 BAT 15-124 Case capacitance Noise
12	BAT18	Siemens Semiconductor Group	Silicon RF Switching Diode 2 20 200 1 0.7 – pF Ω nH – Values typ. 0.38 max. 1.2 V nA Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2
13	BAT30	Siemens Semiconductor Group	silicon schottky diode
14	Q62702-B63	Siemens Semiconductor Group	NPN SILICON EPIBASE TRANSISTORS
15	Q62702-B63	Siemens Semiconductor Group	PNP SILICON EPIBASE TRANSISTORS
16	BD617	Siemens Semiconductor Group	NPN SILICON EPIBASE TRANSISTORS
17	BAL74	Siemens Semiconductor Group	Silicon Switching Diode everse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2 4 pF ns V(BR) VF IR – – – – 0.1 100 µA µA Values typ. max. Unit 50 – – – – 1 V Pulse generator: tp = 100 ns,
18	BAL99	Siemens Semiconductor Group	Silicon Switching Diode (For high-speed switching) characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA CD trr – – – – 1.5 6 pF ns V(BR) VF – – – – IR – – – – – – 2.5 30 50 – – – – 715 855 1 1.25 mV mV V V µA Values typ.
19	BAR63	Siemens Semiconductor Group	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) cified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resista
20	BAR64-04	Siemens Semiconductor Group	Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) Edition A01, 23.02.95 BAR 64... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics per diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA Diode capacit