Siemens Semiconductor Group AF Hoja de datos

No.	parte #	Fabricante	Descripción
1	BC327-40	Siemens Semiconductor Group	PNP Silicon AF Transistors • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337
2	BC639	Siemens Semiconductor Group	NPN Silicon AF Transistors 50 W ˚C mA A BC 639 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 75 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W an
3	Q62702-C1888	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B
4	BCW60A	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) t Rth JA Rth JS ≤ ≤ Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu
5	BCW61	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) h JA Rth JS ≤ ≤ Symbol BCW 61 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 61 FF BCX 71 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. S
6	BC858A	Siemens Semiconductor Group	PNP Silicon AF Transistors q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC
7	ACY32	Siemens Semiconductor Group	PNP TRANSISTORS FOR AF INPUT STAGES
8	SAF-C501G-1EP	Siemens Semiconductor Group	8-Bit CMOS Microcontroller USART Six interrupt sources, two priority levels Power saving modes Quick Pulse programming algorithm (C501-1E only) 2-Level program memory lock (C501-1E only) P-DIP-40, P-LCC-44, and P-MQFP-44 package Temperature ranges : SAB-C501 TA : 0 ˚C to 70 ˚
9	Q62702-C1774	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B
10	Q62702-C26	Siemens Semiconductor Group	PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
11	BCW60	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) t Rth JA Rth JS ≤ ≤ Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu
12	BCW60FF	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) t Rth JA Rth JS ≤ ≤ Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu
13	BCX23	Siemens Semiconductor Group	PNP SILICON AF TRANSISTORS
14	BC636	Siemens Semiconductor Group	PNP Silicon AF Transistors + 150 W ˚C mA A BC 640 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 55 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W
15	SAF-C501G-1E24P	Siemens Semiconductor Group	8-Bit CMOS Microcontroller USART Six interrupt sources, two priority levels Power saving modes Quick Pulse programming algorithm (C501-1E only) 2-Level program memory lock (C501-1E only) P-DIP-40, P-LCC-44, and P-MQFP-44 package Temperature ranges : SAB-C501 TA : 0 ˚C to 70 ˚
16	Q62702-C1322	Siemens Semiconductor Group	PNP Silicon AF Transistors (For general AF applications High current gain) t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 67 BCW 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics
17	Q62702-C1502	Siemens Semiconductor Group	PNP Silicon AF Transistors For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 54 … BCX 56 (NPN) q Type BCX 51 BCX 51-10 BCX 51-16 BCX 52 BCX 52-10 BCX 52-16 BCX 53 BCX 53-10 BCX 53-16 Marking AA AC A
18	Q62702-C1555	Siemens Semiconductor Group	PNP Silicon AF Transistors (For general AF applications High current gain)
19	Q62702-C1612	Siemens Semiconductor Group	NPN Silicon AF Transistors (For general AF applications High current gain) t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 65 BCW 66 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics
20	Q62702-C1864	Siemens Semiconductor Group	NPN Silicon AF Transistors (For general AF applications High collector current) 5.91 BCX 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE