BC639 Siemens Semiconductor Group Transistors, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

BC639

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Part Number	BC639
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 636, BC 638, BC 640 (PNP) q BC 635 … BC 639 2 3 1 Type BC ...
Features	50 W ˚C mA A BC 639 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 75 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 635 … BC 639 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 635 BC 637 BC 639 Collector-base breakdown voltage IC = 100 µA...
Document	BC639 Data Sheet PDF 126.58KB

No.	Parte #	Fabricante	Descripción
1	BC635	SEMTECH	NPN Silicon Epitaxial Planar Transistor
2	BC635	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
3	BC635	Motorola Inc	High Current Transistors
4	BC635	NXP	NPN medium power transistors
5	BC635	Siemens Semiconductor Group	NPN Silicon AF Transistors
6	BC635	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR