| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor |
SIPMO Power Transistor case www.DataSheet4U.com Symbol min. Values typ. max. 2.25 100 50 tbd - Unit RthJC RthJA RthJA - K/W Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Static Characteristics Drain- sou |
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Siemens Semiconductor |
SIPMO Power Transistor case www.DataSheet4U.com Symbol min. Values typ. max. 2.25 100 50 tbd - Unit RthJC RthJA RthJA - K/W Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Static Characteristics Drain- sou |
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Siemens |
IGBT |
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Siemens |
NPN SILICON TRANSISTOR |
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Siemens Semiconductor Group |
SIPMO Power Transistor ce, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 2.25 100 50 tbd K/W Unit RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) I DSS 6 |
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Desde 2024. D4U Semiconductor.
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