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SPD02N60 |
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| Part Number | SPD02N60 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Preliminary data SPD02N60 SPU02N60 SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated Pin 1 G Type SPD02N60 SPU02N60 Pin 2 D Pin 3 S VDS ID 600 V 2 A RDS(on) @ VGS Pac... |
| Features |
ce, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 2.25 100 50 tbd K/W Unit
RthJC RthJA RthJA
-
Static Characteristics Drain- source breakdown voltage
V(BR)DSS VGS(th) I DSS
600 2.1
3
4
V
VGS = 0 V, I D = 0.25 mA
Gate threshold voltage, VGS = VDS I D = 1 mA Zero gate voltage drain current
µA 0.1 10 4.2 1 100 100 5.5 nA Ω
VDS = 600 V, VGS = 0 V, T j = 25 °C VDS = 600 V, VGS = 0 V, T j = 150 °C
Gate-source leakage current
I GSS RDS(on)
-
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, I D = 1.... |
| Document |
 SPD02N60 Data Sheet
PDF 86.47KB |
Similar Datasheet
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