| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sharp Electrionic Components |
CMOS 64K (8K x 8) Static RAM • 8,192 × 8 bit organization • Access times: 80/100 ns (MAX.) • Low-power consumption: Operating: 303 mW (MAX.) LH5164A/D/N @ 80 ns 248 mW (MAX.) LH5164A/D/N/T @ 100 ns 275 mW (MAX.) LH5164AH/HD/HN/HT @ 100 ns Standby: LH5164A/D/N/T: 5.5 µW (MAX.) LH |
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Sharp Electrionic Components |
CMOS 1M (64K x 16) MROM • 65,536 words × 16 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • JEDEC standard EPROM p |
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Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • P |
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Sharp Electrionic Components |
256 x 36 x 2 Bidirectional FIFO • Fast Cycle Times: 20/25/30/35 ns • Pin-Compatible and Functionally-Compatible • • • • Two 256 × 36-bit FIFO Buffers Full 36-bit Word Width Selectable 36/18/9-bit Word Width on Port B Independently-Synchronized (‘Fully-Asynchronous’) Operation of Po |
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Sharp Electrionic Components |
CMOS 16K (2K x 8) Static RAM • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 µW (MAX.) • Single +5 V power supply • Fully-static operation • TTL compatible I/O • Three-state outputs • Wide temperature range ava |
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Sharp Electrionic Components |
CMOS 16K (2K x 8) Static RAM • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 µW (MAX.) • Single +5 V power supply • Fully-static operation • TTL compatible I/O • Three-state outputs • Wide temperature range ava |
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Sharp Electrionic Components |
CMOS 64K (8K x 8) Static RAM • 8,192 × 8 bit organization • Access time: 200 ns (MAX.) • Supply current (MAX.): Operating: 248 mW 55 mW (tRC, tWC = 1 µs) Standby: 5.5 µW Data retention: 0.6 µW (VCC = 3 V, tA = 25°C) • Wide operating voltage range: 2.7 V to 5.5 V • Fully-static o |
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Sharp Electrionic Components |
CMOS 64K (8K x 8) Static RAM • 8,192 × 8 bit organization • Access time: 200 ns (VCC = 3.0 V MAX.) • Power consumption: Operating: 60 mW (MAX.) @ 3 V Standby (to 60°C): 3 µW (MAX.) @ 3 V Data hold 0.6 µA (VCC = 3 V, TA = 60 °C) • Operating voltage range: 3.0 V to 3.6 V • Wide op |
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Sharp Electrionic Components |
256K SRAM |
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Sharp Electrionic Components |
256K SRAM |
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Sharp Electrionic Components |
256K SRAM |
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Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (MAX.) • Programmable CE/OE/OE • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power sup |
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Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM • 131,072 words × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • Mask-programmable OE1/OE1/DC • Fully-static operation • TTL-compatible I/O • Three-state outputs • Single +5 V po |
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Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM • 131,072 words × 16 bit organization • Access time: 100 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.) • Packages: 40-pin, 600 |
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Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM • 3,145,728 words × 8 bit organization (Byte mode) 1,572,864 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.) Standby: 1650 µW (MAX.) • Static operation • TTL compatible I/O • Three-st |
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Sharp Electrionic Components |
CMOS 4M (512K x 8) MROM • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Package: 40-pin, 10 × 20 |
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Sharp Electrionic Components |
CMOS 2048 x 9 Asynchronous FIFO • Fast Access Times: 15/20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port and Output Port Have Entirely Independent Timing • Expandable in Width and Depth • Full, Half-Full, and Empty Status Fla |
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Sharp Electrionic Components |
512 x 18 / 1024 x 18 Synchronous FIFO • Fast Cycle Times: 20/25/35 ns • Pin-Compatible Drop-In Replacements for IDT72215B/25B FIFOs 512 × 18 / 1024 × 18 Synchronous FIFO • May be Cascaded for Increased Depth, or Paralleled for Increased Width • Five Status Flags: Full, Almost-Full, Hal |
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Sharp Electrionic Components |
2048 x 18 / 4096 x 18 Synchronous FIFOs • Fast Cycle Times: 20/25/35 ns • Pin-Compatible Drop-In Replacements for IDT72235B/45B FIFOs 2048 × 18 / 4096 × 18 Synchronous FIFOs • May be Cascaded for Increased Depth, or Paralleled for Increased Width • 16 mA-IOL High-Drive Three-State Output |
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Sharp Electrionic Components |
512 x 36 x 2 / 1024 x 36 x 2 Synchronous Bidirectional FIFO • Pin-Compatible and Functionally • • • • • • • • • • • • • • • • • • • • • • • • • Upwards-Compatible with Sharp LH5420 and LH543601, but Deeper Expanded Control Register that is Fully Readable as well as Writeable Fast Cycle Times: 18/20/25/30/35 n |
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Desde 2024. D4U Semiconductor.
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