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LH532000B |
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| Part Number | LH532000B |
| Manufacturer | Sharp Electrionic Components |
| Description | The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes. It is fabricated using silicon-gate CMOS process technology. CMOS 2M (256K × 8/128K × ... |
| Features |
• 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • Programmable OE/OE and OE1/OE1/DC • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 48-pin, 12 × 18 mm2 TSOP (Type I) • ×16 word-wide pinout DESCRIPTION The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word m... |
| Document |
 LH532000B Data Sheet
PDF 68.60KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 2 | LH532048 |
Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM |
|
| 3 | LH532100B |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 4 | LH532100B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 5 | LH5324000 |
Sharp Electrionic Components |
CMOS 24M (3M x 8) MROM |
|
| 6 | LH5324500 |
Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) MROM |
|
Desde 2024. D4U Semiconductor.
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