Secos SSD Hoja de datos

No.	parte #	Fabricante	Descripción
1	SSD13P06-C	SeCoS	P-Channel Enhancement Mode Power MOSFET Advanced high cell density Trench technology Lower Gate Charge Green Device Available MARKING 13P06 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD13P06-C Lead (Pb)-free
2	SSD25N10-C	SeCoS	N-Ch Enhancement Mode Power MOSFET  Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available MARKING 25N10   = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 2 ORDER INFORMATION Drain Part Number SSD25N
3	SSD25N10	SeCoS	N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size 13 inch 2 Drain 3 Source TO-252(D-Pack) A B C D GE K HF
4	SSD30P06-45D	SeCoS	P-Channel MOSFET  Low RDS(on) provides higher efficiency and extends battery life.  Miniature TO-252 surface mount package saves board space.  High power and current handling capability.  Extended VGS range (±25) for battery pack applications. PRODUCT SUMMARY V
5	SSD12P10-C	SeCoS	P-Ch Enhancement Mode Power MOSFET  Simple Drive Requirement  Lower On-Resistance  Fast Switching Characteristic MARKING 12P10  = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD12P10-C Lead (Pb)-free
6	SSD10N10J-C	SeCoS	N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number
7	SSD12P10	SeCoS	P-Channel Enhancement Mode Power MosFET Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant MARKING 12P10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 1 Gate 2 Drain 3 Source A B C D GE K HF N O P M
8	SSD20N06-C	SeCoS	N-Ch Enhancement Mode Power MOSFET  Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available MARKING 20N06   = Date Code PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch 2 ORDER INFORMATION Drain Part Number Type
9	SSD95N03	SeCoS	N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 95N03 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A BC D GE
10	SSD02N60J-C	SeCoS	N-Ch Enhancement Mode Power MOSFET  Robust high voltage termination  Avalanche energy specified  Source-to-drain diode recovery time comparable to a discrete fast recovery diode  Diode is characterized for the use in bridge circuits  IDSS and VDS are specified at the elevated tem
11	SSD20P03-60	SeCoS	P-Channel MOSFET     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology. A B C D PRODUCT SUMMARY VDS(V) -30 PRODUCT SUMMARY R
12	SSD40N10-30D	SeCoS	N-Ch Enhancement Mode Power MOSFET Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. TO-252(D-Pack) APPLICATION PoE Power Sourcing Equipment. PoE Powered Devices. Telecom DC/DC converters. White LED boost converters. A B C D GE PACKAGE INFORMATION Package
13	SSD50P06-15D	SeCoS	P-Channel MOSFET  Low RDS(on) provides higher efficiency and extends battery life.  Miniature TO-252 surface mount package saves board space.  High power and current handling capability.  Extended VGS range (±25) for battery pack applications. PACKAGE INFORMATIO
14	SSD75N06-C	SeCoS	N-Channel MOSFET Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING 75N06 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD75N06-C Lead (Pb)-free
15	SSD15N10-C	Secos	N-Ch Enhancement Mode Power MOSFET  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 15N10   = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD15N10-
16	SSD29N10J-C	SeCoS	N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 29N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD29N10J-C Lead (Pb)-fr
17	SSD23N04-C	SeCoS	N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 23N04 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD23N04-C Lead (Pb)-fre
18	SSD20N06-90D	SeCoS	N-Channel MOSFET     Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframce DPAK saves board space Fast switching speed High performance trench technology A B C D GE PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY
19	SSD20P04-60D	SeCoS	P-Channel MOSFET     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. A B C D PRODUCT SUMMARY VDS(V) -40 PRODUCT SUMMARY
20	SSD20P06-135D	SeCoS	P-Channel MOSFET     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. A B C D PRODUCT SUMMARY VDS(V) -60 PRODUCT SUMMARY