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SeCoS |
N-Channel MOSFET * Capable Of 2.5V Gate Drive * Lower On-Resistance D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,[email protected] Continuous Drain Current,[email protected] Pulsed Drain Current1,2 Total Power Dissipation |
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SeCoS |
N-Channel Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 0410 = Date Code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 |
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SeCoS |
N-Channel Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 0410 = Date Code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Pa |
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SeCoS |
P-Channel MOSFET * Surface Mount Device * Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Fa |
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SeCoS |
P-Channel MOSFET The SGM2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SGM2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application |
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SeCoS |
N-Channel MOSFET * Simple Drive Requirement * Small Package Outline D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 |
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SeCoS |
N-Channel MOSFET Simple Drive Requirement Small Package Outline MARKING K F 2310B = Date code SOT-89 A Top View C B 4 L E 123 D GH REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 1.Gate 2.Drain |
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SeCoS |
N-Channel Enhancement Mode Power MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 0410S = Date code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch SOT-89 A Top View C B KL E 123 D F GH 4 J REF. A B C D E F Millimeter Min |
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SeCoS |
N-Channel MOSFET * Lower On-Resistance * Capable Of 2.5V Gate drive D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 |
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SeCoS |
N-Channel MOSFET * Small Package Outline * Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,[email protected] Continuous Drain Current,[email protected] Pulsed Drain Current1,2 Total Power Dissipation |
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SeCoS |
N-Channel MOSFET Simple drive requirement Super high density cell design for extremely low RDS(ON) MARKING D 24 A Top View C B KL E 123 D F GH 4 J REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 REF. G H J |
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SeCoS |
N-Channel MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING CJ A9452 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ORDER INFORMATION Part Number Type SGM9452J Lead (Pb)-free SGM9452J-C |
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SeCoS |
N-CHANNEL MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 35N20 = Date code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) |
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SeCoS |
N-CHANNEL MOSFET Low Gate Charge Simple Drive Requirement Green Device Available ESD susceptibility 2KV RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free MARKING SOT-89 4 123 A E C PACKAGE INFORMATION Package MPQ SOT-89 3K Leader Si |
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Desde 2024. D4U Semiconductor.
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