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SGM1K35N20 |
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| Part Number | SGM1K35N20 |
| Manufacturer | SeCoS |
| Description | The SGM1K35N20 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applicatio... |
| Features |
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available
MARKING
35N20
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size 7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current @VGS=10V 1
Pulsed Drain Current 4 Total Power Dissipation 2
TA=25°C TA=70°C
TA=25°C
VGS ID
IDM PD
Operating Junction and Storage Temperature Ran... |
| Document |
 SGM1K35N20 Data Sheet
PDF 560.01KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | SGM1N25E |
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|
| 2 | SGM-2-17 |
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DOUBLE-BALANCED MIXER DOUBLE-BALANCED MIXER |
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| 3 | SGM0410 |
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| 4 | SGM0410-C |
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| 5 | SGM0410S |
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| 6 | SGM20 |
Sumitiomo |
compact physical dimensions |
|
Desde 2024. D4U Semiconductor.
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