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SeCoS |
P-Channel Enhancement Mode Power MOSFET Advanced high cell density Trench technology Lower Gate Charge Green Device Available MARKING 13P06 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD13P06-C Lead (Pb)-free |
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SeCoS |
Plasetic Encapsulate ESD Protection Diodes TA = 25°C ) RATING SYMBOL VALUE UNIT IEC 61000-4-2 (ESD) Air Contact ±15 KV ±8.0 ESD voltage per human body model 30 KV Total power dissipation on FR-5 Board (Note 1) PD 200 mW Thermal Resistance Junction−to−Ambient RθJA 625 °C / W Ju |
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SeCoS |
P-Ch Enhancement Mode Power MOSFET Simple Drive Requirement Lower On-Resistance Fast Switching Characteristic MARKING 12P10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD12P10-C Lead (Pb)-free |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number |
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SeCoS |
P-Channel Enhancement Mode Power MosFET Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant MARKING 12P10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 1 Gate 2 Drain 3 Source A B C D GE K HF N O P M |
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SeCoS |
Plastic-Encapsulate Schottky Diodes Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time SOD-123 MARKING Part Number Marking SD101AW S1 SD101BW S2 SD101CW S3 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Si |
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SeCoS |
NPN Epitaxial Planar Silicon Transistor Ratings 40 32 5.0 2.0 0.5 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEO Min. 40 32 Typ. |
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Secos |
0.35AMP Surface Mount Schottky Barrier Rectifiers .012 (0.3) Cathode Band Top V iew Dimensions in inches and (millimeters) . Case: SOD-323, Molded plastic . Epoxy: UL 94V-0 rate flame retardant . Metallurgically bonded construction . Polarity: Color band denotes cathode end . Mounting position: |
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SeCoS |
0.35AMP Schottky Barrier Rectifier RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance DO-35 Ø 1.9 Mechanical Data * Case:DO-35,Gla |
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SeCoS |
NPN Plastic Encapsulated Transistor Small Flat Package SOT-89 4 High Breakdown Voltage Excellent DC Current Gain Linearity A B C 3 E C 1 2 CLASSIFICATION OF hFE(1) Product-Rank Range Marking 2SD1005-W 90~180 BW 2SD1005-V 135~270 BV 2SD1005-U B E D F G H K J L 200~400 BU Collec |
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SeCoS |
NPN Silicon General Purpose Transistor SOT-89 E1 b1 1 L Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O 2 3 o e e1 b C 1.BASE 2.COLLECTOR 3.EMITTER Di |
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SeCoS |
Surface Mount Schottky Diode Array Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Low Leakage Current MARKING . KLL PACKAGE INFORMATION Package MPQ Leader Size SOT-363 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specif |
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SeCoS |
Surface Mount Schottky Barrier Rectifiers . Low forward voltage drop . Guard ring construction for transient protection . Negligible reverse recovery time . Low reverse capacitance A B CE H D GJ MECHANICAL DATA . Case: SOD-123, Molded plastic . Epoxy: UL 94V-0 rate flame retardant . Metall |
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Secos |
N-Ch Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 15N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD15N10- |
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Secos |
0.35AMP Surface Mount Schottky Barrier Rectifiers .012 (0.3) Cathode Band Top V iew Dimensions in inches and (millimeters) . Case: SOD-323, Molded plastic . Epoxy: UL 94V-0 rate flame retardant . Metallurgically bonded construction . Polarity: Color band denotes cathode end . Mounting position: |
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SeCoS |
0.35AMP Schottky Barrier Rectifier RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance DO-35 Ø 1.9 Mechanical Data * Case:DO-35,Gla |
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SeCoS |
0.35AMP Schottky Barrier Rectifier RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance DO-35 Ø 1.9 Mechanical Data * Case:DO-35,Gla |
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SeCoS |
NPN Silicon General Purpose Transistor z z z Dim A L 3 Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sa |
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SeCoS Halbleitertechnologie |
240W Transient voltage suppressors Diode M Z O Q R _ & N q & P G Z W W & r & s t & B A & ^ uv & L H M & w x XZ R & y N z Y & XN z H G ; < =@A B C C C D E D F & G H I H G & E & =JK& L M N O H P O Q N R '4567849: ÏÐÑÒÓÔÕÖ ×ÐØÙ ()*+, -./ 0123 >? Ë È Ú Ê Ë È Ë Í Ë È Î Ê Ë È Ë Í Ë È Ç Ê Ë È |
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SeCoS |
NPN Transistor Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current CLASSIFICATION OF hFE Product-Rank 2SD1468S-Q 2SD1468S-R 2SD1468S-S Range 120~270 180~390 270~560 TO-92S REF. A B C D E F G H J K L Millimete |
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Desde 2024. D4U Semiconductor.
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