SeCoS PZT Hoja de datos

No.	parte #	Fabricante	Descripción
1	PZTA14	SeCoS	NPN Transistor
2	PZTA94	SeCoS	Epitaxial Planar Transistor High Current Gain: IC=300mA at 25 C High Voltage: VCEO=400V (min) at IC=1mA *Complementary With PZTA44 REF. A C D E I H C E o Date Code A9 4 Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 B Mill
3	PZT3906	SeCoS	Epitaxial Planar Transistor ltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO ICES IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 fT Cob Min -40 -40 -5 - -0.65 60 80 100 60 30 250
4	PZT987A	SeCoS	PNP Silicon Planar Medium Power High Gain Transistor * Gain Of 200 At Ic=2A And Very Low Saturation Voltage 9 8 7A REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3
5	PZT159	SeCoS	High Current Transistor * 5 Amps continuous current, up to 15 Amp peak current. www.DataSheet4U.net * Excellent gain SOT-223 f characteristic specified up to 10Amps. * Very low saturation voltage f 3.56 0.95±0.05 0.03 0.30± R0.15 R0.15 Mechanica
6	PZT195	SeCoS	Medium Power Transistor * -60 Voltage VCEO. www.DataSheet4U.net * 1 Amps continuous SOT-223 current. f f f * Complementary to PZT194 f 5 5 Mechanical Data Case: SOT-223 Plastic Package Weight: approx. 0.021g Marking Code
7	PZT3904	SeCoS	General Purpose Transistor Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.2 A Collector-base voltage V (BR)CBO : 6 0 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć ELECTRICAL CHARACTERISTICS (Tamb=25Я E unless SOT-223
8	PZTA92	SeCoS	PNP Transistor on Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min -300 -300 -5 - - - hFE1 25 DC Current Gain hFE2 40 hFE3 25 Gain-Bandwidth Product Output Capacitance fT 50 Cob - unless otherwise specified Typ. - - Max - -250 -100 Un
9	PZT559	SeCoS	PNP Silicon Planar * Excellent Gain Characteristic Specified Up To 3 Amps. * 4 Amps Continuous Current, Up To 10 Amps Peak Current * Very Low Saturation Voltages 559 MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified) REF. A C D E I H Millimeter Min. Max. 6.
10	PZT2907A-C	SeCoS	Silicon Planar Medium Power Transistor Epitaxial Planar Die Construction MARKING ZT2907A PACKAGE INFORMATION Package MPQ SOT-223 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type PZT2907A-C Lead (Pb)-free and Halogen-free 1 Base MAXIMUM RATINGS (TA=25°C unless otherw
11	PZTA44-C	SeCoS	NPN Silicon Medium Power Transistor For AF Driver and Output Stages High Collector Current Low Collector-Emitter Saturation Voltage MARKING ZTA44 PACKAGE INFORMATION Package MPQ SOT-223 2.5K Leader Size 13 inch SOT-223 A M Top View C B KL E 1 2 3 D F GH 4 J ORDER INFORMATIO
12	PZT559A-C	SeCoS	PNP Transistor 4Amps Continuous Current, Up to 10Amps Peak Current Excellent Gain Characteristic Specified Up to 3Amps Very Low Saturation Voltages MARKING 559A Date code PACKAGE INFORMATION Package MPQ SOT-223 2.5K Leader Size 13 inch ORDER INFORMATION P
13	PZT949	SeCoS	PNP Transistor 6Amps continuous current, up to 20Amps pulse current Very low saturation voltage MARKING Collector 2 4 949 = Date code 1 Base 3 Emitter MAXIMUM RATINGS* (Tamb=25 °C, unless otherwise specified) Top View C B KL E 1 2 D F GH REF. A B C D E
14	PZT4403	SeCoS	Epitaxial Planar Transistor High Power Dissipation: 1500mW at 25 oC High DC Current Gain: 100~300 at 150mA *Complementary to PZT4401 4403 ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base
15	PZT772	SeCoS	PNP Transistor Epitaxial Planar Transistor
16	PZT158	SeCoS	Silicon Planar High Current Transistor * 6Amps Continous Current, Up To 20Amps Peak Current * Excellent Gain Characteristic, Specified Up To 10Amps * Very Low Saturation Voltages Date Code REF. A C D E I H 1 5 8 B o C E Min. 6.70 2.90 0.02 0 0.60 0.25 Max. 7.30 3.10 0.10 10 0.80 0.
17	PZT194	SeCoS	Silicon Planar Medium Power Transistor * 1 Amps Continous Current * 60 Volt VCEO * Complementary To PZT195 Date Code REF. A C D E I H 1 9 4 B o C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 MAXIMUM RATINGS* (Tamb =25 C, unless o
18	PZT4401	SeCoS	Epitaxial Planar Transistor High Power Dissipation: 1500mW at 25 oC High DC Current Gain: 100~300 at 150mA *Complementary to PZT4403 440 1 ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base
19	PZT2907A	SeCoS	Silicon Planar Medium Power Transistor ctor - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut - Off Current Collector - Emitter Saturation Voltage Base - Emitter Voltage DC Current Gain Symbol V(BR)CBO
20	PZT2222A	SeCoS	General Purpose Transistor Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.6 A Collector-base voltage V (BR)CBO : 75 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć E SOT-223 1. BASE 2. COLLECTOR 3. EMITTER f