logo

PZTA92 SeCoS PNP Transistor Datasheet

PZTA92T1G TRANS PNP 300V 0.5A SOT223


SeCoS
PZTA92
Part Number PZTA92
Manufacturer SeCoS
Description The PZTA92 is designed for application as a viedo output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-223 A9 2 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30...
Features on Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min -300 -300 -5 - - - hFE1 25 DC Current Gain hFE2 40 hFE3 25 Gain-Bandwidth Product Output Capacitance fT 50 Cob - unless otherwise specified Typ. - - Max - -250 -100 Unit V V V nA nA Test Conditions IC=-100µA,IE=0 IC=-1 mA,IB=0 IE=-100µA,IC=0 VCB=-2 00V,IE=0 VBE=-3 V - -500 mV IC=- 20mA,IB=-2mA - -900 mV IC=- 20mA,IB=- 2 mA -- VCE=-10V, IC=-1 mA -- VCE=-10 V, IC=-10 mA -- VCE=-10 V, IC=-30 mA - - MHz VCE=-20V, IC=- 10mA,f=100MHz - 6 pF VCB=-20 V, f=1MHz http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any c...

Document Datasheet PZTA92 datasheet pdf (634.37KB)
Distributor Distributor
DigiKey
Stock 12215 In Stock
Price
100000 units: 0.09225 USD
50000 units: 0.09317 USD
25000 units: 0.09914 USD
10000 units: 0.10063 USD
5000 units: 0.11181 USD
2000 units: 0.11665 USD
1000 units: 0.12671 USD
500 units: 0.18634 USD
100 units: 0.2013 USD
10 units: 0.335 USD
1 units: 0.43 USD
BuyNow BuyNow BuyNow (Manufacturer a onsemi)




PZTA92 Distributor

onsemi
PZTA92
1000 units: 177 KRW
500 units: 201 KRW
100 units: 222 KRW
Distributor
element14 Asia-Pacific

0 In Stock
BuyNow BuyNow
onsemi
PZTA92T1G
TRANS PNP 300V 0.5A SOT223
100000 units: 0.09225 USD
50000 units: 0.09317 USD
25000 units: 0.09914 USD
10000 units: 0.10063 USD
5000 units: 0.11181 USD
2000 units: 0.11665 USD
1000 units: 0.12671 USD
500 units: 0.18634 USD
100 units: 0.2013 USD
10 units: 0.335 USD
1 units: 0.43 USD
Distributor
DigiKey

12215 In Stock
BuyNow BuyNow
Nexperia
PZTA92115
Trans GP BJT PNP 300V 0.1A 4-Pin(3+Tab) SOT-223 T/R (Alt: PZTA92,115)
450000 units: 0.11 USD
225000 units: 0.11265 USD
90000 units: 0.11543 USD
45000 units: 0.11835 USD
27000 units: 0.11987 USD
18000 units: 0.12143 USD
9000 units: 0.12303 USD
Distributor
Avnet Asia

0 In Stock
BuyNow BuyNow
onsemi
PZTA92T1G
Bipolar Transistors - BJT 500mA 300V PNP
1 units: 0.43 USD
10 units: 0.306 USD
100 units: 0.187 USD
1000 units: 0.126 USD
2000 units: 0.108 USD
10000 units: 0.1 USD
25000 units: 0.099 USD
50000 units: 0.093 USD
Distributor
Mouser Electronics

26865 In Stock
BuyNow BuyNow
onsemi
PZTA92T1G
Trans GP BJT PNP 300V 0.5A 1500mW 4-Pin(3+Tab) SOT-223 T/R
105000 units: 0.0914 USD
56000 units: 0.0923 USD
35000 units: 0.0933 USD
28000 units: 0.0941 USD
14000 units: 0.0951 USD
7000 units: 0.096 USD
Distributor
Arrow Electronics

7000 In Stock
BuyNow BuyNow
part
onsemi
PZTA92T1G
Transistor Bipolar PNP 300V 50mA SOT-223, RL
4000 units: 0.93 HKD
2000 units: 0.959 HKD
1000 units: 0.988 HKD
Distributor
RS

9970 In Stock
BuyNow BuyNow
part
onsemi
PZTA92T1G
Bipolar Transistor (BJT)
25 units: 0.292 USD
50 units: 0.291 USD
100 units: 0.186 USD
200 units: 0.17 USD
500 units: 0.145 USD
1000 units: 0.138 USD
2000 units: 0.128 USD
4000 units: 0.121 USD
8000 units: 0.12 USD
16000 units: 0.0999 USD
Distributor
Chip1Stop

56881 In Stock
BuyNow BuyNow
onsemi
PZTA92T1G
Trans GP BJT PNP 300V 0.5A 1500mW 4-Pin(3+Tab) SOT-223 T/R
1000 units: 0.0931 USD
64 units: 0.1696 USD
Distributor
Verical

6000 In Stock
BuyNow BuyNow
onsemi
PZTA92
PZTA92 - Small Signal Bipolar Transistor, 0.5A, 300V, PNP
1000 units: 0.1257 USD
500 units: 0.1331 USD
100 units: 0.139 USD
25 units: 0.1449 USD
1 units: 0.1479 USD
Distributor
Rochester Electronics

5353 In Stock
BuyNow BuyNow
Nexperia
PZTA92-QX
Bipolar Transistors - BJT PZTA92-Q/SOT223/SC-73
6000 units: 0.107 USD
10000 units: 0.096 USD
25000 units: 0.093 USD
50000 units: 0.089 USD
100000 units: 0.087 USD
Distributor
TTI

0 In Stock
BuyNow BuyNow





Similar Datasheet

Part Number Description
PZTA06
manufacturer
UTC
AMPLIFIER TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PZTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW  ORDERING INFORMATION Ordering Number PZTA06G-AA3-R Note: Pin Assignment: B: Base C: Collector Package SOT-223 E: Emitter Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-031.A PZTA06 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 4 V Collector Current - Co...
PZTA06
manufacturer
NXP
NPN transistor
4 DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: PZTA56. 1 2, 4 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 100 mA; VCE = 1 V IC = 10 mA; VCE = 2 V; f = 100 MHz open emitter open base CONDITIONS − − − − 100 100 MIN. MAX. 80 80 500 1.2 − − MHz V V mA W UNIT 1997 Jul 14 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134...
PZTA06
manufacturer
Fairchild Semiconductor
NPN General Purpose Amplifier
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier September 2014 MPSA06 / MMBTA06 / PZTA06 NPN General-Purpose Amplifier Features • This device is designed for general-purpose amplifier applications at collector currents to 300 mA. • Sourced from process 12. MPSA06 MMBTA06 C PZTA06 C EBC TO-92 Ordering Information Part Number MPSA06 MMBTA06 PZTA06 Top Mark MPSA06 1G A06 E B SOT-23 Mark: 1G Package TO-92 3L SOT-23 3L SOT-223 4L E C B SOT-223 Packing Method Bulk Tape and Reel Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating cond...
PZTA13
manufacturer
Siemens Semiconductor Group
NPN Silicon Darlington Transistors
NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications q High collector current q High current gain q Complementary types: PZTA 63 PZTA 64 (PNP) q Type PZTA 13 PZTA 14 Marking PZTA 13 PZTA 14 Ordering Code (tape and reel) Q62702-Z2033 Q62702-Z2034 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCES VCB0 VEB0 IC ICM I...
PZTA13
manufacturer
Fairchild Semiconductor
NPN Darlington Transistor
TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option September 1999, Rev. B TO-92 Tape and Reel Data and Package Dimensions, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”...
PZTA13
manufacturer
Infineon Technologies AG
NPN Silicon Darlington Transistors
PZTA13, PZTA14 NPN Silicon Darlington Transistors  For general AF applications  High collector current  High current gain  Complementary types: PZTA63, PZTA64 (PNP) 4 3 2 1 VPS05163 Type PZTA13 PZTA14 Maximum Ratings Parameter Marking PZTA 13 PZTA 14 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCES VCBO VEBO Values 30 30 10 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 300 500 100 200 1.5 150 -65 ... 150 mA mA W °C Thermal Resista...
PZTA14
manufacturer
SeCoS
NPN Transistor
The PZTA14 is darlington amplifier transistor designed for applications requiring extremely high current gain. Date Code A1 4 BC E REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature Value 30 30 10 300 2 -55~+150 Units V V V mA W CO ELECTRICAL CHARACTERISTICS Tamb=25oC Parameter Collector-Base Breakdown...
PZTA14
manufacturer
JCET
NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA14 TRANSISTOR (NPN) SOT-223 FEATURES z High current (max. 500 mA) z Low voltage (max. 30 V). z Pre-amplifiers requiring high input impedance. 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base brea...
PZTA14
manufacturer
WEITRON
Darlington NPN Silicon Planar Epitaxial Transistor
PZTA14 Darlington NPN Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free BASE 1 COLLECTOR 2, 4 3 EMITTER 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 4 SOT-223 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Value 30 30 10 300 2 150 -55 to +150 Unit V V V mA W C C Device Marking PZTA14=A14 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC = 1mA , IB=0) Symbol Min Max Unit V(BR)CEO 30 - V Collector-Base Breakdown Voltage (IC =100µA , IE...
PZTA14
manufacturer
NXP
NPN Darlington transistor
NPN Darlington transistor in a SOT223 plastic package. PNP complement: PZTA64. PINNING PIN 1 2, 4 3 base/input collector/output emitter/ground PZTA14 DESCRIPTION handbook, halfpage 4 1 2, 4 TR1 TR2 3 1 Top view 2 3 MAM319 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter volta...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy