| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Savantic |
Silicon NPN Power Transistors turation voltage IC=3A; IB=0.8A VBEsat Base-emitter saturation voltage IC=3A ;IB=0.8A ICBO Collector cut-off current VCB=500V; IE=0 hFE DC current gain fT Transition frequency COB Collector output capacitance VF Diode forward voltage tf Fall ti |
|
|
|
|
SavantIC |
Silicon NPN Power Transistors tter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=2mA VBEsat Base-emitter saturation voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain IC=2A; IB=2mA VCB=100V ; |
|
|
|
|
SavantIC |
Silicon NPN Power Transistors ration voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Fall time CONDITIONS IC=8A ;IB=2A IC=8A ;IB=2A VCB=500V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR or-emitter saturation voltage IC=2A ;IB=0.75A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.75A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1 mA hFE DC current gain IC=2A ; VCE=10V 4 12 VF |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR itter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=0.1A , IB=0 IC=4A ;IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 8 MIN 600 www.datasheet |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR VCEsat VBEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=1mA ;IB=0 IE=50µA ;IC=0 IC=50µA ;IE=0 IC=1.0A ;IB=0.1A IC=1.0A ;IB=0.1A VCB=120V; IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 160 V Emitter-b |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR turation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V 2000 50 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR fT COB Collector-emitter saturation voltage IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 8 3.0 5.0 V Base-emitter saturation voltage 1.5 V Collector cut-off current 10 µA |
|
|
|
|
SavantIC |
Silicon NPN Power Transistors |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR itter cut-off current DC current gain Transition frequency Collector output capacitance Fall time CONDITIONS IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz ICP=4A ;IB1(end)=0.8A 8 MIN |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ter cut-off current DC current gain Transition frequency Collector output capacitance Fall time CONDITIONS IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz ICP=5A ;IB1(end)=1A 8 MIN www.data |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR CEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR 0mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 5.0 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA hFE DC current gain IC=0.5A ; VCE |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR urrent DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=6A ICP=5A ;IB1(end) |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR e Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=25mA ,RBE== IC=0.1mA ,IE=0 I |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR .5A ;IB=2A IE=1mA ;IC=0 VCB=750V; IE=0 6 50 1 50 4 15 MIN TYP. MAX 2.0 1.3 UNIT V V V µA mA µA SYMBOL VCEsat VBEsat V(BR)EBO ICBO Collector cut-off current VCB=1500V; IE=0 IEBO hFE Emitter cut-off current DC current gain VEB=5V; IC=0 IC=2A ; VC |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR er saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance Fall time CONDITIONS IC=10mA , IB=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=800V; IE=0 VEB=5V; IC=0 IC=10mA |
|
|
|
|
SavantIC |
Silicon NPN Power Transistors B=0 V(BR)CBO Collector-base breakdown voltage IC=50µA ,IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA ,IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A ICBO Collector |
|
|
|
|
Savantic |
Silicon NPN Power Transistors ut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=0.2A , IC=0 IC=3A; IB=0.8A IC=3A ;IB=0.8A VCB=500V; IE=0 IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=3.5A I |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ,IB=0 IC=50µA ,IE=0 IE=50µA ,IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB |
|
Desde 2024. D4U Semiconductor.
|