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| Distributor | Stock | Price | Buy |
|---|
2SD1565 |
| Part Number | 2SD1565 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications. . |
| Features | SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 2mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE-1 DC Current Gain IC= 2A; VCE= 2V 2000 20000 hFE-2 DC Current Gain IC= 4A; VCE= 2V 500 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1562 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1562 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD1562A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1563 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD1563A |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1563A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD1564 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD1566 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1500 |
Inchange Semiconductor |
Power Transistor |
|
| 10 | 2SD1503 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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