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2SD1565 |
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| Part Number | 2SD1565 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operati... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 2mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
1.0
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3
mA
hFE-1
DC Current Gain
IC= 2A; VCE= 2V
2000
20000
hFE-2
DC Current Gain
IC= 4A; VCE= 2V
500
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
60
pF
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
80
MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
I... |
| Document |
 2SD1565 Data Sheet
PDF 206.66KB |
Desde 2024. D4U Semiconductor.
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