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SavantIC |
2SB668 -10mA, IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA, IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-2mA, IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-8mA -2.0 V VBEsat Base-emitter sat |
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SavantIC |
2SB1342 fied PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; IB= |
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SavantIC |
2SB628 1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=-0.3 A;IB=-30m A VBE Base-emitter voltage IC=-0.3A ; VCE=-4V ICBO Collector cut-off current VCB=-120V; IE=0 IEBO Emitter cut-off current VEB=-4V; IC=0 hFE DC current gain IC=-0.3A ; VC |
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SavantIC |
2SB1367 voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A VBE Base-emitter on voltage IC=-4A;VCE=-5V ICBO Collector cut-off current VCB=-100V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-6A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=1A ; VCE=-12V 5000 MIN |
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SavantIC |
2SB1430 METER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100 |
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SavantIC |
2SB673 wn voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA, IB=0 IC=-3A ,IB=-6mA IC=-7A ,I |
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SavantIC |
2SB1098 -3A; IB=-3mA VBEsat Base-emitter saturation voltage IC=-3A; IB=-3mA ICBO Collector cut-off current VCB=-100V ;IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-3A ; VCE=-2V hFE-2 DC current gain IC=-5A ; VCE=-2V |
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SavantIC |
2SB1186 voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 I |
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SavantIC |
2SB1105 Collector-emitter saturation voltage IC=-1.5A ,IB=-3mA VCEsat-2 Collector-emitter saturation voltage IC=-3A ,IB=-30mA VBEsat-1 Base-emitter saturation voltage IC=-1.5A ,IB=-3mA VBEsat-2 Base-emitter saturation voltage IC=-3A ,IB=-30mA ICBO Coll |
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SavantIC |
SILICON POWER TRANSISTOR Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A ;IB=-0.3A IC=-1A;VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V I |
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SavantIC |
2SB686 wn voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ,IB=0 IE=-10mA |
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SavantIC |
2SB1018 saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-100V; IE=0 V |
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SavantIC |
2SB754 . MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-4.0A; IB=-0.4A -0.2 -0.4 V VBE Base-emitter voltage I |
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SavantIC |
2SB1470 AX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA ICBO Collector cut-off current VCB=-160V; IE=0 ICEO Collect |
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SavantIC |
2SB1149 Esat Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-1.5mA ICBO Collector cut-off current VCB=-100V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1.5 |
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SavantIC |
2SB1273 tter breakdown voltage IC=-5mA ,RBE=: -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.4 -1.0 V |
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SavantIC |
2SB1344 R)CEO V(BR)CBO VCEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=-5mA; IB=0 IC=-50µA; IE=0 IC=-3A ;IB=-6mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-3V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz -100 V Collector-base breakdown |
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SavantIC |
2SB863 B=0 VCEsat Collector-emitter saturation voltage IC=-5.0A ;IB=-0.5A VBE Base-emitter on voltage IC=-5A ; VCE=-5V ICBO Collector cut-off current VCB=-140V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V |
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SavantIC |
2SB794 j=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 2SB794 2SB795 IC=-10mA ;IB=0 -60 -80 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V VBEsat |
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Desde 2024. D4U Semiconductor.
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