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SavantIC |
2SC3181 ector-emitter breakdown voltage IC=50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A VBE Base-emitter voltage IC=4A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC |
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SavantIC |
2SC3150 e breakdown voltage IC=1mA ; IE=0 V(BR)EBO Base-emitter breakdown voltage IE=1mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A VBEsat ICBO IEBO hFE-1 hFE-2 Base-emitter saturation voltage Collector cut-off current Emitter |
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SavantIC |
2SC3179 aturation voltage IC=2A; IB=0.2 A ICBO Collector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=1A ; VCE=4V fT Transition frequency IE=-0.2A ; VCE=12V COB Output capacitance f=1MHz ; VCB=10V |
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SavantIC |
SILICON POWER TRANSISTOR Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=7A; IB=0.7A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; V |
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SavantIC |
SILICON POWER TRANSISTOR own voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1m |
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SavantIC |
2SC3157 tage IC=5A ;IB1=0.5A;L=1mH VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A ICBO Collector cut-off current ICEX Collector cut-off current IEBO Emitter cut-off current VCB=100V; IE= |
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SavantIC |
2SC3159 at B ICBO IEBO hFE-1 hFE-2 Collector-emitter breakdown voltage IC=10mA ; IB=0 400 IC=1mA ; IE=0 500 IE=1mA ; IC=0 7 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V 10 15 1.0 V Collector-base breakdown volta |
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SavantIC |
SILICON POWER TRANSISTOR e Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=5A; IB=0.5A IC=3A ; VCE=5V VCB=80V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; |
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SavantIC |
2SC3156 Collector-emitter breakdown voltage IC=5mA ; RBE=A V(BR)CBO www.DataSheet4U.com V(BR)EBO Collector-base breakdown voltage Emitter-base breakdown voltage IC=1mA ; IE=0 IE=1mA ; IC=0 VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A VBE |
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SavantIC |
SILICON POWER TRANSISTOR ector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25mH IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 400 2SC3171 SYMBOL VCEO(SUS) VCE(sat) |
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SavantIC |
SILICON POWER TRANSISTOR Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=6A; IB=0.6A IC=4A ; VCE=5V VCB=120V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; V |
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Savantic |
2SC3170 rrent gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 8 MIN 400 www.datasheet4u.com 2SC3170 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO I |
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SavantIC |
2SC3171 (sat) Base-emitter saturation voltage IC=5A; IB=1A ICBO Collector cut-off current VCB=500V; IE=0 IEBO hFE-1 Emitter cut-off current DC current gain VEB=5V; IC=0 IC=0.1A ; VCE=5V hFE-2 DC current gain IC=5A ; VCE=5V fT Transition frequency |
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SavantIC |
SILICON POWER TRANSISTOR wn voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;RBE=: IC=5mA ;IE=0 IC=1.5A ,IB=3mA IC=1.5A ,IB=3mA VCB=40V |
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SavantIC |
SILICON POWER TRANSISTOR uration voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;RBE=: IC=5mA ;IE=0 IC=3.5A ,IB=7mA IC=3.5A ,IB=7mA VCB=40V, IE=0 VEB=5V; IC=0 IC=3.5A ; VCE=2V 2000 MIN 60 70 S |
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SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=< IC=1mA ; IE=0 I |
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SavantIC |
SILICON POWER TRANSISTOR ctor-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency |
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SavantIC |
SILICON POWER TRANSISTOR emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5A ;IB1=0.5A;L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VCE=100V; VBE=1.5V Ta |
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SavantIC |
SILICON POWER TRANSISTOR itter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated voltage IC=5A ; VCE=2V IC=1A ; VCE=10 |
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Desde 2024. D4U Semiconductor.
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