2SC3180 |
Part Number | 2SC3180 |
Manufacturer | SavantIC |
Description | ·With TO-3P(I) package ·Complement to type 2SA1263 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj. |
Features | e Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=5A; IB=0.5A IC=3A ; VCE=5V VCB=80V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 35 MIN 80 2SC3180 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob TYP. MAX UNIT V 2.0 1.5 5 5 160 V V µA µA 30 105 MHz pF hFE-1 Classifications R 55-110 O 80-160 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3. |
Datasheet |
2SC3180 Data Sheet
PDF 193.80KB |
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2SC3180 |
Part Number | 2SC3180 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1263 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifi. |
Features | ollector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 3A; VCE= 5V 35 COB . |
2SC3180 |
Part Number | 2SC3180 |
Manufacturer | Toshiba |
Title | Silicon NPN Transistor |
Description | SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SA1263 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curr. |
Features | . Complementary to 2SA1263 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CRO VcEO v EBO ic IB pc T J Tstg RATING 80 80 5 6 0.6 60 150. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3180N |
INCHANGE |
NPN Transistor | |
2 | 2SC3180N |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC3181 |
INCHANGE |
NPN Transistor | |
4 | 2SC3181 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC3181 |
Toshiba |
Silicon NPN Transistor | |
6 | 2SC3181N |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC3182 |
INCHANGE |
NPN Transistor | |
8 | 2SC3182 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC3182 |
Toshiba |
Silicon NPN Transistor | |
10 | 2SC3182N |
SavantIC |
SILICON POWER TRANSISTOR |