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SavantIC |
Silicon power Transistor tter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE=8 IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1500V; RBE=8 MIN 800 6 2SC3025 SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES TYP. MAX UNIT V V 2.0 1.5 0.5 V V mA |
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SavantIC |
SILICON POWER TRANSISTOR age Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition f |
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SavantIC |
SILICON POWER TRANSISTOR e breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIO |
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SavantIC |
Silicon power Transistor age Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition f |
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SavantIC |
SILICON POWER TRANSISTOR tor-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Outpu |
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SavantIC |
SILICON POWER TRANSISTOR oltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transitio |
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SavantIC |
Silicon power Transistor ut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=130V; IE=0 VEB=3V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 60 40 MIN 2SC3012 SYMBOL |
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SavantIC |
Silicon power Transistor tter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE=9 IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1700V; RBE=9 MIN 800 6 2SC3026 SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES TYP. MAX UNIT V V 2.0 1.5 0.5 V V mA |
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SavantIC |
SILICON POWER TRANSISTOR akdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC |
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SavantIC |
SILICON POWER TRANSISTOR reakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS |
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SavantIC |
2SC3040 llector-emitter breakdown voltage IC=10mA ;RBE== V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A VBEsat Base-emitter saturat |
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SavantIC |
2SC3090 lector-emitter breakdown voltage IC=5mA ;RBE=< V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A VBEsat Base-emitter saturatio |
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SavantIC |
Silicon NPN Power Transistors IC=1mA; IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A ICBO Collector cut-off current VCB=400V ;IE=0 IEBO Emitter cut |
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SavantIC |
2SC3055 A ; IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=0.1A VBE(sat) Base-emitter saturation voltage IC=0.5A; IB=0.1A ICBO Collector cut-off current VCB=400V ;IE=0 IEBO Emitter |
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SavantIC |
2SC3058 or-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capa |
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SavantIC |
Silicon power Transistor breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS |
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SavantIC |
SILICON POWER TRANSISTOR ration voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=< IC=1mA ; IE=0 IE=1mA ; IC=0 IC=0.5A; IB=0.1A IC=0.5A; I |
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SavantIC |
SILICON POWER TRANSISTOR or-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capa |
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SavantIC |
SILICON POWER TRANSISTOR tor-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output cap |
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SavantIC |
SILICON POWER TRANSISTOR cified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=10mA ;RBE=> IC=1mA; IE=0 IE=1mA; IC=0 IC=2A; IB=0. |
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Desde 2024. D4U Semiconductor.
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