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2SC3012 |
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| Part Number | 2SC3012 |
| Manufacturer | SavantIC |
| Description | ·With TO-3PN package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 sim... |
| Features |
ut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=130V; IE=0 VEB=3V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 60 40 MIN
2SC3012
SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT
TYP. 0.6 1.3
MAX 1.5 2.0 50 50 320
UNIT V V µA µA
150 60
pF MHz
hFE-1 Classifications R 60-120 Q 100-200 P 160-320
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3012
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
... |
| Document |
 2SC3012 Data Sheet
PDF 165.84KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3011 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer Transistor |
|
| 2 | 2SC3011 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 3 | 2SC3012 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3017 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 5 | 2SC3018 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 6 | 2SC3019 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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