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| Distributor | Stock | Price | Buy |
|---|
2SC3012 |
| Part Number | 2SC3012 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1232 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO. |
| Features | tage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current VCB= 130V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 2A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V hFE-1 Classifications R Q P 60-120 100-200 160-320 2SC3012 MIN TYP. MAX UNIT 1.5 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3011 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer Transistor |
|
| 2 | 2SC3011 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 3 | 2SC3017 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 4 | 2SC3018 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 5 | 2SC3019 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 6 | 2SC3000 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 7 | 2SC3001 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 8 | 2SC3006 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 9 | 2SC3007 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SC3020 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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