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SavantIC |
2SC2681 ollector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE -1 DC current gain IC=1A ; VCE=2V hFE -2 DC current gain IC=4.5A ; VCE=2V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=1A ; V |
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SavantIC |
2SC2615 ollector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; IB=0 IE=10mA; IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=4A ; VCE=5V IC=8A ; VCE=5V 15 7 MIN 400 7 1.0 1.5 0.1 0.1 TYP. MAX UN |
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SavantIC |
2SC2682 current gain DC current gain Transition frequency utput capacitance CONDITIONS IC=50mA; IB=5mA IC=50mA; IB=5mA VCB=180V; IE=0 VEB=3V; IC=0 IC=1mA ; VCE=5V 90 IC=10mA ; VCE=5V 100 IC=20mA ; VCE=10V IE=0 ; VCB=10V;f=1MHz MIN 2SC2682 SYMBOL P VCEsat C |
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SavantIC |
SILICON POWER TRANSISTOR HARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base satur |
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SavantIC |
SILICON POWER TRANSISTOR tion frequency Collector output capacitance CONDITIONS IC=1mA;RBE=6 IC=10µA; IE=0 IE=10µA; IC=0 IC=20mA; IB=2mA VCE=250V; RBE=6 IC=20mA ; VCE=20V IC=20mA ; VCE=20V IE=0 ; VCB=20V;f=1MHz 30 50 MIN 300 300 5 2SC2611 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO |
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SavantIC |
SILICON POWER TRANSISTOR oltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=;,L=100mH IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=400V; IE=0 VCE=350V; RBE=; IC=1.5A ; VCE= |
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SavantIC |
SILICON POWER TRANSISTOR 660A V(BR)CBO V(BR)EBO ICBO IEBO hFE-1 hFE-2 Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 VCB=200V;IE=0 VEB=4V; IC=0 IC |
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SavantIC |
SILICON POWER TRANSISTOR ransition frequency Output capacitance CONDITIONS IC=50mA; IB=5mA IC=50mA; IB=5mA VCB=180V; IE=0 VEB=3V; IC=0 IC=1mA ; VCE=5V IC=10mA ; VCE=5V IC=20mA ; VCE=10V IE=0 ; VCB=10V;f=1MHz 90 100 MIN 2SC2682 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT |
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SavantIC |
Silicon NPN Power Transistor mitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3A ;IB=0.1A IC=5A ;IB=0.5A IC=3A ;IB=0.1A IC=5A ;IB=0.5A VCB=40V |
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SavantIC |
2SC2660 emitter on voltage 2SC2660 IC=5mA ;IB=0 2SC2660A V(BR)CBO V(BR)EBO ICBO IEBO hFE-1 hFE-2 Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=0.5mA ;IE=0 |
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SavantIC |
SILICON POWER TRANSISTOR voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=:,L=100mH IE=10mA; IC=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A VCB=400V; IE=0 VCE=350V; RBE=: IC=2.5A ; VCE |
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SavantIC |
SILICON POWER TRANSISTOR voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3A ;IB=0.1A IC=5A ;IB=0.5A IC=3A ;IB=0.1A IC=5A ;IB=0.5A VCB=40V; IE=0 VEB=5V; IC= |
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SavantIC |
SILICON POWER TRANSISTOR 660A V(BR)CBO V(BR)EBO ICBO IEBO hFE-1 hFE-2 Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 VCB=200V;IE=0 VEB=4V; IC=0 IC |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1A; IB=0.2A IC=1A ;IB=0.2A VCB=120V; IE=0 VEB=3V; IC=0 IC=5mA ; VCE=5V IC=0.3A ; VCE=5V IE=0 ; VCB=10V f=1MHz |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1A; IB=0.2A IC=1A ;IB=0.2A VCB=120V; IE=0 VEB=3V; IC=0 IC=5mA ; VCE=5V IC=0.3A ; VCE=5V IE=0 ; VCB=10V f=1MHz |
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SavantIC |
Silicon NPN Power Transistors ollector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; IB=0 IE=10mA; IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=4A ; VCE=5V IC=8A ; VCE=5V 15 7 MIN 400 7 1.0 1.5 0.1 0.1 TYP. MAX UN |
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SavantIC |
SILICON POWER TRANSISTOR rrent Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=8A; IB=0.8A VCB=200V; IE=0 VEB=6V; IC=0 IC=8A ; VCE=4V IC=1A ; VCE=12V 20 MIN 200 200 6 2SC2608 SYMBOL V(BR)CEO V(BR)CBO V(BR)E |
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SavantIC |
SILICON POWER TRANSISTOR ent gain Output capacitance Transition frequency CONDITIONS IC=4.5A ;IB=0.45A IC=4.5A ; VCE=2V VCB=80V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=4.5A ; VCE=2V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=2V 60 40 MIN 2SC2681 SYMBOL VCEsat VBE ICBO IEBO hFE -1 hFE |
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Savantic |
Silicon NPN Power Transistors |
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Desde 2024. D4U Semiconductor.
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