Distributor | Stock | Price | Buy |
---|
2SC2626 |
Part Number | 2SC2626 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amp. |
Features | or 2SC2626 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 300 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 7 . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2620 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SC2621 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
3 | 2SC2621 |
Sanyo Electric |
NPN Triple Diffused Planar Silicon Transistor | |
4 | 2SC2624 |
Inchange Semiconductor |
Power Transistor | |
5 | 2SC2625 |
Fuji Electric |
TRIPLE TRANSISTOR | |
6 | 2SC2625 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR | |
7 | 2SC2625 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
8 | 2SC2625B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor | |
9 | 2SC2627 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
10 | 2SC2628 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |