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SavantIC |
Silicon NPN Power Transistors -off current VEB=5V; IC=0 hFE DC current gain IC=0.5A ; VCE=10V COB Output capacitance IE=0; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VCE=10V Product Specification 2SC2073 MIN TYP. MAX UNIT 1.5 V 0.85 V 10 µA 10 µA 40 140 35 pF 4 MHz |
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SavantIC |
2SC2027 |
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SavantIC |
2SC2075 oltage IC=3A; IB=0.3 A V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1.0mA; IC=0 ICBO Collector cut-off current VCB=30V;IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE-1 DC current g |
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SavantIC |
SILICON POWER TRANSISTOR emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=3A; IB=0.3 A IC=10mA; IB=0 IE=1.0mA; IC=0 VCB=30V;IE=0 VE |
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SavantIC |
SILICON POWER TRANSISTOR eakdown voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1A; IB=0.1 A IC=1A; IB=0.1 A IC=0.1mA; IE=0 IC=1mA;RBE=150< IE=0.1mA; IC=0 VCB=40V;IE=0 VEB=4V; IC=0 IC=0.5A ; VCE |
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SavantIC |
2SC2022 or-emitter saturation voltage IC=500mA; IB=100mA ICBO Collector cut-off current VCB=300V ;IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=200m A ; VCE=4V fT Transition frequency IC=100mA ; VCE=12V Product Specification |
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SavantIC |
Silicon NPN Power Transistors |
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SavantIC |
SILICON POWER TRANSISTOR tter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V ICBO Collector cut-off current VCB=300V ;IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC curren |
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SavantIC |
SILICON POWER TRANSISTOR C current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=1A; IB=0.2A VCB=300V ;IE=0 VEB=6V; IC=0 IC=0.5 A ; VCE=4V IC=0.2A ; VCE=12V f=1MHz ; VCB=10V 30 MIN 300 2SC2023 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Co |
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SavantIC |
SILICON POWER TRANSISTOR Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITION |
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SavantIC |
SILICON POWER TRANSISTOR aturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0 IE=1mA; IC=0 IC=4.0 A;IB=1.3 A IC=4.0 A;IB=1.3 A VCB=600V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V 8 2.25 MIN 800 5 |
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Desde 2024. D4U Semiconductor.
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