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| Distributor | Stock | Price | Buy |
|---|
2SC2022 |
| Part Number | 2SC2022 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE. |
| Features | 0.5A; IB= 100mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.2A; VCE= 4V fT Current-Gain—Bandwidth Product IE= 100mA; VCE= 12V MIN TYP. MAX UNIT 300 V 1.0 V 1 mA 1 mA 30 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2020 |
Sony Corporation |
RP POWER TRANSISTOR |
|
| 2 | 2SC2021 |
Rohm |
General Small Signal Amp. Epitaxial Planar NPN Silicon Transistors |
|
| 3 | 2SC2021L |
Rohm |
NPN Transistor |
|
| 4 | 2SC2021LN |
Rohm |
NPN Transistor |
|
| 5 | 2SC2023 |
Sanken electric |
NPN Transistor |
|
| 6 | 2SC2023 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC2023 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC2026 |
NEC |
NPN SILICON TRANSISTOR |
|
| 9 | 2SC2026 |
Inchange |
Silicon NPN RF Transistor |
|
| 10 | 2SC2027 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|