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SavantIC |
SILICON POWER TRANSISTOR j=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Tran |
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SavantIC |
SILICON POWER TRANSISTOR ollector cut-off current Emitter cut-off current DC current gain Diode forward voltage Transition frequency Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IC=4.5A ;IB=1.6A IC=4.5A ;IB=2A VCE=1500V, VBE=0 Tj=125 VEB=5.0V; IC=0 IC=500mA ; VCE=5 |
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SavantIC |
SILICON POWER TRANSISTOR Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain St |
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SavantIC |
SILICON POWER TRANSISTOR 00mA ;IB=0,L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125 VEB=6.0V; IC=0 1.1 1.0 2.0 10 V ICES Collector cut-off current |
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SavantIC |
SILICON POWER TRANSISTOR RACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC curren |
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SavantIC |
SILICON POWER TRANSISTOR aining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Transition frequency Storage time Fall time CONDITIONS IC=100mA ;IB=0 |
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SavantIC |
SILICON POWER TRANSISTOR IC=100mA ;IB=0,L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125 VEB=6.0V; IC=0 1.1 1.0 2.0 10 V ICES Collector cut-off curr |
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SavantIC |
SILICON POWER TRANSISTOR .com Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Diode forward voltage Transi |
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SavantIC |
SILICON POWER TRANSISTOR tter sustaining voltage IC=100mA ;IB=0,L=25mH IC=4.5A; IB=1.6A IC=4.5A ;IB=2A VEB=5V; IC=0 VCB=BVCBO IE=0 TC=125 IC=0.5A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IF=4.5A 700 V VCE(sat) VBE(sat) IEBO ICES hFE fT COB VF Collector-emitter sa |
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SavantIC |
SILICON POWER TRANSISTOR Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage Transition frequency Output capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IC=4.5A ;IB=1.6A IC=4.5A ;IB=1.6A VCE=1500V, VBE=0 Tj=125 VEB=5.0V; IC=0 IC=0.5A ; VCE=5V |
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SavantIC |
SILICON POWER TRANSISTOR IB=0; BU526A V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC |
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SavantIC |
SILICON POWER TRANSISTOR e breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0; IE=10mA; IC=0; IC=4A;IB=0.8A IC=4A;IB=0.8A VCB=1100V |
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SavantIC |
SILICON POWER TRANSISTOR ter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.5A; IB=0;L= |
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SavantIC |
SILICON POWER TRANSISTOR CONDITIONS MIN TYP. www.datasheet4u.com BU505 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.9 A 5.0 V VBEsat Base-emitter saturation |
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SavantIC |
SILICON POWER TRANSISTOR lector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current CONDITIONS IC=100mA; IB=0 IC=3A; IB=1.33A IC=3A; IB=1.33A IC=0.1A ; VCE=5V VCE=rated; VBE=0 TC=125 VEB=6V; IC=0 6 13 M |
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SavantIC |
SILICON POWER TRANSISTOR er sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Diode forward voltage CONDITIONS IC=100mA; IB=0; L=25mH IC=3A; IB=1.33A IC=3A; IB=1.33A IC=0. |
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SavantIC |
SILICON POWER TRANSISTOR TER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector cut-off current Emitter cut-off current Diode forward voltage CONDITIONS IC=100mA; IB=0,L=25mH IC= |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=4.5A; IB=1.6A IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125 VEB=6V; IC=0 IC |
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SavantIC |
SILICON POWER TRANSISTOR MIN www.datasheet4u.com BU508DFI SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5 |
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SavantIC |
SILICON POWER TRANSISTOR IB=0; BU526A V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC |
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Desde 2024. D4U Semiconductor.
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