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BU508AF SavantIC SILICON POWER TRANSISTOR Datasheet

BU508AF Bipolar Transistors - BJT NPN Power Transistor


SavantIC
BU508AF
Part Number BU508AF
Manufacturer SavantIC
Description ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-ba...
Features tter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=4.5A; IB=1.6A IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125 VEB=6V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 6 MIN 700 7.5 www.datasheet4u.com BU508AF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE fT COB TYP. MAX UNIT V 13.5 1.0 1.1 1.0 2.0 10 30 7 125 V V V mA mA MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com ...

Document Datasheet BU508AF datasheet pdf (145.09KB)
Distributor Distributor
Mouser Electronics
Stock 4970 In Stock
Price
1 units: 3.06 USD
10 units: 2.79 USD
25 units: 1.96 USD
100 units: 1.78 USD
300 units: 1.51 USD
600 units: 1.46 USD
1200 units: 1.42 USD
5100 units: 1.39 USD
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




BU508AF Distributor

part
STMicroelectronics
BU508AF
트랜지스터 - 양극(BJT) - 단일 NPN 700V 8A 50W 스루홀 TO-3PF
5010 units: 2062.3865 KRW
2010 units: 2149.6682 KRW
1020 units: 2282.9795 KRW
510 units: 2666.2412 KRW
120 units: 2999.5166 KRW
30 units: 3499.4666 KRW
1 units: 4414 KRW
Distributor
DigiKey

188 In Stock
BuyNow BuyNow
part
STMicroelectronics
BU508AF
Bipolar Transistors - BJT NPN Power Transistor
1 units: 3.06 USD
10 units: 2.79 USD
25 units: 1.96 USD
100 units: 1.78 USD
300 units: 1.51 USD
600 units: 1.46 USD
1200 units: 1.42 USD
5100 units: 1.39 USD
Distributor
Mouser Electronics

4970 In Stock
BuyNow BuyNow
part
STMicroelectronics
BU508AF
High voltage NPN power transistor for standard definition CRT display
1 units: 3 USD
10 units: 2.73 USD
25 units: 1.92 USD
100 units: 1.74 USD
300 units: 1.48 USD
Distributor
STMicroelectronics

4970 In Stock
BuyNow BuyNow
part
STMicroelectronics
BU508AF
BU508 Series NPN 8 A 700 V 50 W Power Transistor - ISOWATT218FX
1200 units: 1.36 USD
750 units: 1.41 USD
300 units: 1.44 USD
120 units: 1.47 USD
30 units: 1.51 USD
Distributor
Future Electronics

0 In Stock
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part
Philips Semiconductors
BU508AF
INSTOCK
No price available
Distributor
Chip 1 Exchange

172 In Stock
No Longer Stocked
part
STMicroelectronics
BU508AF
Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) ISOWATT218FX Tube - Rail/Tube (Alt: BU508AF)
60000 units: 1.2438 USD
30000 units: 1.27239 USD
6000 units: 1.30098 USD
3000 units: 1.32958 USD
1800 units: 1.35817 USD
1200 units: 1.38676 USD
600 units: 1.41535 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
STMicroelectronics
BU508AF
Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) ISOWATT218FX Tube (Alt: BU508AF)
No price available
Distributor
Avnet Silica

0 In Stock
BuyNow BuyNow





BU508AF Similar Datasheet

Part Number Description
BU508
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INCHANGE
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 125W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 125 W 150 ℃ Tstg Storage T...
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·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 125 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c P...
BU508A
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 125W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 125 W 150 ℃ Tstg Storage T...
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. 1 2 TO-3 TO-218 33 22 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO V EBO IC ICM Parameter Collector-Emit ter Volt age (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Ptot Vi so l Tstg Tj Total Dissipation at Tc = 25 oC Insulation W ithstand Voltage (RMS) from All Three Leads to Exernal Heatsink St orage Temperature Max. Operating Junction Temperature ...
BU508A
manufacturer
SavantIC
SILICON POWER TRANSISTOR
·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 125 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c P...
BU508A
manufacturer
CDIL
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
SYMBOL VALUE Collector -Base Voltage VCBO 1500 Collector -Emitter Voltage Emitter Base Voltage VCEO VEBO 700 5.0 Collector Current IC 5 Total Power Dissipation up to Tc=25 ºC Ptot 50 Junction Temperature Tj 150 Storage Temperature Tstg - 55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICEO VCE=800V, IB=0 Collector Cut off Current Emitter Cut off Current ICBO IEBO VCB =800V, IE =0 VEB =4V, IC =0 Collector Emitter Voltage VCEO IC=50mA, IB =0 DC Current Gain Collector Emitter Saturation Voltage hFE VCE (sat) IC=1A, VCE=5V IC=5A, IB =1A MIN 160 8 UNIT V V V...
BU508A
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Philips
Silicon Diffused Power Transistor
...
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manufacturer
Multicomp
Horizontal Deflection Transistors
BU508A, 508D Horizontal Deflection Transistors High Voltage Switching Specifically designed for use in large screen colour deflection circuits. Features: • Collector-Emitter Sustaining Voltage VCEX = 1500V (Minimum) - BU508A, BU508D. • Glassivated Base-Collector Junction. Pin 1. Base 2. Collector 3. Emitter Dimensions Minimum Maximum A 20.63 22.38 B 15.38 16.20 C 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 12.84 G 4.20 4.50 H 1.82 2.46 I 2.92 3.23 J 0.89 1.53 K 5.26 5.66 L 18.50 21.50 M 4.68 5.36 N 2.40 2.80 O 3.25 3.65 P 0.55 0.70 Dimensions : Millimetres NPN BU508A BU508D 5 Ampere Power Transistors 1500 Volts 125 Watts TO-247(3P) Page 1 31/05/05 V1.0 BU50...
BU508A
manufacturer
Thinki Semiconductor
HIGH VOLTAGE FAST-SWITCHING SILICON NPN POWER TRANSISTOR
With TO-3PN package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 3 2 1 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) ICM Collector current (Pulse) PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance ju...
BU508A
manufacturer
BLUE ROCKET ELECTRONICS
Silicon NPN transistor
TO-3P NPN 。Silicon NPN transistor in a TO-3P Plastic Package. / Features 、。 High breakdown voltage, high speed, wide SOA. / Applications 、CRT 。 Horizontal deflection output for TV and CRT monitor. / Equivalent Circuit / Pinning PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BU508A Rev.D Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage(VEB=0) Emitter to Base Voltage Collector Current - Continuous Peak Collector Current Total Power Dissipation Storage Temperature Range Thermal Resistance Junct...




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