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SavantIC |
2SA1232 ; IE=0 IEBO Emitter cut-off current VEB=-3V; IC=0 hFE-1 DC current gain IC=-2A ; VCE=-5V hFE-2 DC current gain IC=-5A ; VCE=-5V Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-1A ; VCE=-5V Product Specification |
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SavantIC |
SILICON POWER TRANSISTOR Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ; IB=0 IC=-500mA;IB=-50mA IC=-50mA ; VCE=-4V VCB=-120V;IE=0 VEB=-6V; IC=0 IC=-50mA ; VCE=-4V IC=-500mA ; VCE=-10V IC=-500mA ; VCE=-10V |
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SavantIC |
2SA1279 rrent Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ; IB=0 IC=-3A;IB=-0.15A IC=-3A;IB=-0.15A VCB=-60V;IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V IE=0 ; V |
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SavantIC |
SILICON POWER TRANSISTOR ng voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5A ;IB1=-0.5A;L=1mH IC=-5A; IB= |
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SavantIC |
SILICON POWER TRANSISTOR on frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IE=0.2A ; VCE=-12V IE=0 ; VCB=-10V ;f=1MHz 40 MIN -60 2SA1262 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Cob TYP. MAX UNIT V - |
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SavantIC |
SILICON POWER TRANSISTOR rent DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ; IB=0 IC=-3A;IB=-0.15A IC=-3A;IB=-0.15A VCB=-60V;IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz 70 30 MIN |
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SavantIC |
SILICON POWER TRANSISTOR ctor-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,RBE=8 IC=-1 |
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SavantIC |
SILICON POWER TRANSISTOR pecified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITI |
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SavantIC |
SILICON POWER TRANSISTOR voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-100V; IE=0 VEB=-7V; |
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SavantIC |
SILICON POWER TRANSISTOR er on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-0.5A ; VCE=-2V VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; |
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SavantIC |
SILICON POWER TRANSISTOR ter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1A; IB=-0.2A IC=-1A ;IB=-0.2A VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-5mA ; VCE=-5V IC=-0.3A ; V |
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SavantIC |
SILICON POWER TRANSISTOR t Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-140V; IE=0 VEB=-3V; IC=0 IC=-2A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 2S |
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SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; RBE=; IC=-10µA; IE=0 |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-6A; IB=-0.6A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE= |
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SavantIC |
SILICON POWER TRANSISTOR rent Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-7A; IB=-0.7A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=5V IC=-1A ; VCE=-5V IE=0 ; VC |
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SavantIC |
SILICON POWER TRANSISTOR ltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ,IB=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-2V VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2 |
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SavantIC |
SILICON POWER TRANSISTOR specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDIT |
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SavantIC |
SILICON POWER TRANSISTOR RAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA |
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SavantIC |
2SA1250 (BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Collector-emitter breakdown voltage IC=-10mA ;IB=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=200V; IE=0 VEB=-7V; IC=0 IC=-2A ; VCE=-1V IC=-5A ; VCE=-1V www.DataSheet.net/ -200 V Emitter-base |
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SavantIC |
2SA1262 mitter saturation voltage IC=-2A; IB=-0.2A -0.6 V ICBO Collector cut-off current VCB=-60V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 µA hFE DC current gain fT Transition frequency IC=-1A ; VCE=-4V IE=0.2A ; VCE=-12V 40 15 |
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Desde 2024. D4U Semiconductor.
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