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2SA1262 |
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| Part Number | 2SA1262 |
| Manufacturer | SavantIC |
| Description | ·With TO-220 package ·Complement to type 2SC3179 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base v. |
| Features | on frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IE=0.2A ; VCE=-12V IE=0 ; VCB=-10V ;f=1MHz 40 MIN -60 2SA1262 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Cob TYP. MAX UNIT V -0.6 -100 -100 V µA µA 15 90 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-2A ;IB1=- IB2=-0.2A RL=10A;VCC=-20V 0.25 0.75 0.25 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1262 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) . |
| Datasheet |
 2SA1262 Data Sheet
PDF 156.72KB |
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2SA1262 |
| Part Number | 2SA1262 |
| Manufacturer | Inchange Semiconductor |
| Title | POWER TRANSISTOR |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -2A ·Complement to Type 2SC3179 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applicat. |
| Features | VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.2A; VCE= -12V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz MIN TYP. MAX UNIT -60 V -0.6 V -100 μA -100 μA 40 15 MHz 90 pF NOTICE. |
2SA1262 |
| Part Number | 2SA1262 |
| Manufacturer | Sanken electric |
| Title | Silicon PNP Transistor |
| Description | 2SA1262 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1262 –60 –60 –6 –4 –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1262 –100max –100m. |
| Features |
age V C E (s at) (V ) –4 V CE ( sat ) – I B Characteristics (Typical) –1.5 I C – V BE Temperature Characteristics (Typical) –4 (V C E = –4V) –8 –3 0m A –60m A –50m A Collector Current I C (A) –40m A –30mA Collector Current I C (A) –3 –1.0 emp eT Cas 125 ˚C ( –2 –20mA –2 ) –10mA –1 I C = –3A –2A –1A 0 –0.1 I B = –5mA 0 0 –1 –2 –3 –4 –5 –6 –0.5 –0.1 –0.5 –1 0 0 –0.5 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1261 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1261 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1261-Z |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | 2SA1263 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2SA1263 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 6 | 2SA1263N |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SA1263N |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 8 | 2SA1264 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 9 | 2SA1264 |
Toshiba |
Silicon PNP Transistor |
|
| 10 | 2SA1264N |
SavantIC |
SILICON POWER TRANSISTOR |
|
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