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2SA1264 Silicon PNP Transistor

2SA1264

2SA1264
2SA1264 2SA1264
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Part Number 2SA1264
Manufacturer Toshiba (https://www.toshiba.com/)
Description : . SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3181 . Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 03.2±O.2 15.9MAX. MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collect.
Features . Complementary to 2SC3181 . Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 03.2±O.2 15.9MAX. MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL Vf.RO VcEO v EBO ic IB pC Tj T stg RATING -120 -120 -5 -8 -0.8 UNIT V V V A A 80 W 150 °C -55 -150 °c 5.45 ±0.2 5.45 ±0.2 C3c3 +1 X < s 03 00 C) t l> --'(> «-^ ,">T I | 1. BASE 2. COLLECTOR (HEAT SINK ) 3. EMITTER TO.
Datasheet Datasheet 2SA1264 Data Sheet
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2SA1264

Inchange Semiconductor
2SA1264
Part Number 2SA1264
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC3181 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency ampli.
Features (BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -.


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