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Sanyo Semicon Device |
N-Channel Silicon MOSFET • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167A [MCH3445] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167A [MCH3319] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilit |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • Low ON-resistance. • Ultrahigh-speed switching. Package Dimensions unit : mm 2167A [MCH3339] 0.3 0.15 3 2.1 1.6 0.25 0.25 21 0.65 2.0 (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-S |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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Sanyo Semicon Device |
N-CHANNEL MOS SILICON TRANSISTOR • • • Package Dimensions unit : mm 2167A [MCH3443] 0.25 Low ON-resinstance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 Specification |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167A [MCH3444] 0.25 0.3 0.15 Low ON-resinstance. Ultrahigh-speed switching. 2.5V drive. 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 Specifications |
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Sanyo Semicon Device |
DC / DC Converter Applications • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Composite type with a P-Channel Sillicon MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mou |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Dra |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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Sanyo Semicon Device |
DC / DC Converter Applications • • NPN Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC / DC Converter Applications Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. Ultrasmall package pe |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drai |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier • • • • NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=16dB typ (f=1GHz). Composite type with 2 RF tran |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • General-Purpose Switching Device Applications 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistor • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting. Ultrasmall package allows applied sets to be made small and thin. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25 |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. Package Dimensions unit : mm 2167A [MCH3317] 0.3 0.15 3 2.1 1.6 0.25 Specifications Absolute Maximum Ratings at Ta=25°C 0.25 21 0.65 2.0 (Bottom view) 0.85 0.07 3 12 (Top view) |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB01-05) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short rever |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET DC / DC Converter Applications • Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3443) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc |
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Desde 2024. D4U Semiconductor.
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