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MCH5812 |
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| Part Number | MCH5812 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : ENN7998 MCH5812 www.DataSheet4U.com MCH5812 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composi... |
| Features |
• MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation C... |
| Document |
 MCH5812 Data Sheet
PDF 77.75KB |
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